^Emi-C.onaueto'i iJ-^ioaucti, O
na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BUX39
25,15(0,99)
26.67(1,05)
10.67 (0.42)
11.10(0.44)
1.52(0.06)
3.43(0.135)
6.3S (0.25)
9.15(0.36)
HIGH CURRENT
HIGH SPEED
HIGH POWER
SILICON NPN PLANAR
TRANSISTOR
FEATURES
• Fast Turn-On Time - 1(is @ l
c
= 15A
• High Current Capability
3
{case)
384(0151)
4.09(0.1611
7.92 (0312)
1270(050)
Applications
The BUX39 is an epitaxial silicon NPN planar
transistor that has high current and high power han-
dling capability and high switching speed.
This device is especially suitable for switching-control
amplifiers, power gates, switching regulators, power-
switching circuits converters, inverters and control cir-
cuits.Other recommended applications include
DC-RF amplifiers and power oscillators.
TO-204AA (TO-3)
PIN 1 — Base
PIN 2 — Emitter
Case
is Collector.
ABSOLUTE MAXIMUM RATINGS
(T
ra
,
p
= 25°C unless otherwise stated)
V
CBO
V
CEX
V
CER
V
CEO(sus)
V
EBO
Collector - Base Voltage
Collector - Emitter Sustaining Voltage
Collector - Emitter Voltage
Collector - Emitter Sustaining Voltage
Emitter - Base Voltage
Collector Current
Peak Collector Current
Base Current
Total Power Dissipation
Derate above 25°C
@ V
BE
= -1 ,5V
@ R
BE
= 1 0Ofi
120V
120V
110V
90V
7V
30A
40A
6A
120W
0.68 W / ° C
-65 to 100 °C
230°C
"c
'CM
IB
Plot
T
stg'
T
j
Maximum Junction and Storage Temperature Range
Lead Temperature > V
32
inch (0.8 mm) for 10 sec. max.
TL
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
BUX39
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
Collector - Emitter Sustaining
VcEO(sus)'
Test Conditions
l
c
= 0.2A
L = 25mH
I
C
= Q
V
CE
= 70V
V
CE
= 120V
V
BE
= -1.5V
V
BE
= -1.5V
V
CE
= 120V
T
C
= 125°C
l
c
= 0
I
C
= 12A
Vj
Min.
90
Typ. Max. Unit
V
I
B
= °
I
E
= 50mA
Voltage
Emitter - Base
Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Collector - Emitter
Saturation Voltage
Base - Emitter
Saturation Voltage
DC Current Gain
Second Breakdown
V(BR)EBO
'CEO
7
1
1
5
1
0.7
1.25
2.1
15
8
1
4
8
0.8
1.5
1.2
1.6
2.5
45
V
mA
'CEX
mA
mA
V
V
'EBO
V
CE(satr
VBE = -5V
I
D
= 1.2A
B
I
B
=2.5A
I
B
= 2.5A
V
rF
= 4V
\~rl-
l
c
= 20A
l
c
= 20A
I
w
= 12A
C
l
c
= 20A
V
CE
= 45V
V
CE
= 30V
I
C
= 1A
l
\s
= 20A
c
I
B
= 2.5A
l
c
= 20A
V
BE(sat)'
h
FE
.
VCE = 4V
t = 1s
t= 1s
V
CE
= 15V
V
\j\j
c =
30V
C
V
cc
= 30V
~~
A
MHz
's/b
f
T
1
ON
Collector Current
Transition Frequency
Turn-On Time
Storage Time
Fall Time
ts
tf
0.55
0.15
1
0.3
IIS
I
B1
= -I
B2
= 2.5A
THERMAL CHARACTERISTICS
Thermal Resistance Junction to Case
1.46
°C/W
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