CLe.iiE.ii ^£,m.i-(-ona\jLC.toi L/^ioaucti., Ona.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BUX98C
HIGH POWER NPN SILICON TRANSISTOR
.
.
.
.
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
HIGH CURRENT CAPABILITY
FAST SWITCHING SPEED
APPLICATIONS:
. HIGH FREQUENCY AND EFFICENCY
CONVERTERS
. LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BUX98C is a Silicon Multi Epitaxial Mesa
NPN transistor in Jedec TO-3 metal case,
intended for use in switching and industrial
applications from single and three-phase mains
operations.
TO-3
(version R)
INTERNAL SCHEMATIC DIAGRAM
Co (TAB)
ABSOLUTE MAXIMUM RATINGS
Symbol
VCER
VCES
VCEO
VEBO
Ic
I CM
ICMP
IB
IBM
Plot
Tstg
Tj
Parameter
Collector-Emitter Voltage (RBE < 0 fi)
Collector-Emitter Voltage (V
B
E = 0)
Collector-Emitter Voltage
Emitter-Base Voltage (Ic = 0)
Collector Current
Collector Peak Current (t
p
<
5
ms)
Collector Peak Current non Repetitive
Base Current
Base Peak Current (t
p
<
5
ms)
Total Dissipation at T
c
= 25 °C
Storage Temperature
Max. Operating Junction Temperature
Value
1200
1200
700
7
30
60
80
8
30
250
Unit
V
V
V
V
A
A
A
A
A
W
°C
°C
-65 to 200
200
Quality Semi-Conductors
^£mL-(2onauctoi ^Products.,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
BUX98C
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
0.7
°C/W
ELECTRICAL CHARACTERISTICS
(Tease = 25 °C unless otherwise specified)
Symbol
ICER
ICES
ICEO
Parameter
Collector Cut-off
Current (RBE = 10 £1)
Collector Cut-off
Current (VBE = 0 )
Test Conditions
VCE = VCES
VcE = VcES
Tease = 1 25 °C
Min.
Typ.
Max.
1
8
1
6
2
2
Unit
mA
mA
mA
mA
mA
mA
V
VCE = VCES
VCE = VCES
Tease = 1 25 °C
Collector Cut-off
Vce = VCEO
Current (IB = 0)
Emitter Cut-off Current
VCB = 5 V
IEBO
(lc-0)
lc= 100 mA
VcEO(sus)*
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
Ic = 12 A
VcE(sat)*
Collector-Emitter
Saturation Voltage
l
c
= 16 A
Ic = 20 A
VsE(sat)*
ton
700
IB = 3 A
ls= 5 A
IB = 8 A
IB = 3 A
I
B
= 8 A
0.5
1.5
0.2
1.5
2
3
1.6
2
1
3
0.8
V
V
V
V
V
US
u,s
US
Base-Emitter
Saturation Voltage
Turn-on Time
Storage Time
Fall Time
lc = 12 A
Ic = 20 A
ts
tf
RESISTIVE LOAD
VCC = 250 V I
C
= 12A
I
B
1 = - l B 2 = 3 A
* Pulsed: Pulse duration = 300 us, duty cycle = 1.5 %
Quality Semi-Conductors
DSP and ARM Processors
京公网安备 11010802033920号
EEWORLD
