^zmi-Conauctoi L/^ioaucti, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BUZ11
N - CHANNEL 50V - 0.03Q - 33A TO-220
STripFET™ MOSFET
TYPE
BUZ11
VDSS
50 V
RDS(on)
ID
< 0.04 ii
33 A
TYPICAL Ros(on) = 0.03 Q
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
HIGH CURRENT CAPABILITY
175°C OPERATING TEMPERATURE
APPLICATIONS
. HIGH CURRENT, HIGH SPEED SWITCHING
. SOLENOID AND RELAY DRIVERS
. REGULATORS
. DC-DC & DC-AC CONVERTERS
. MOTOR CONTROL, AUDIO AMPLIFIERS
. AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Parameter
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (R
G
s = 20 kQ)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 °C
Drain Current (pulsed)
Total Dissipation at T
c
= 25 °C
Storage Temperature
Max. Operating Junction Temperature
DIN HUMIDITY CATEGORY (DIN 40040)
IEC CLIMATIC CATEGORY (DIN IEC 68-1)
Value
50
50
Unit
V
V
V
A
A
W
°C
°C
VDGR
VGS
ID
IDM
Plot
T
s
tg
± 20
33
134
90
-65 to 175
175
E
T
55/150/56
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
BUZ11
THERMAL DATA
Rthj-case
Rthj-amb
Thermal
Thermal
Resistance Junction-case
Resistance Junction-ambient
Max
Max
1.67
62.5
°C/W
°C/W
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, 5 < 1%)
Single Pulse Avalanche Energy
(starting T, = 25 °C, I
D
= I
AR
, V
DD
= 25 V)
Value
Unit
IAR
EAS
33
200
A
mJ
ELECTRICAL CHARACTERISTICS
(Tease = 25 °C unless otherwise specified)
OFF
Symbol
V(BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
!
D
=250nA
V
GS
=0
Min.
50
Typ.
Max.
Unit
V
1
10
± 100
uA
MA
nA
loss
IGSS
Zero Gate Voltage
VDS - Max Rating
Drain Current (V
G
s = 0) VDS = Max Rating
Gate-body Leakage
Current (V
DS
= 0)
Tj=l25°C
V
GS
= ± 20 V
ON (*)
Symbol
Vos(th)
RoS(orl)
Parameter
Test Conditions
Min.
2.1
Typ.
3
0.03
Max.
4
0.04
Unit
Gate Threshold Voltage V
D
s = VGS I D = 1 mA
Static Drain-source On
Resistance
V
il
VGS = 10V
I
D
= 19 A
DYNAMIC
Symbol
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
Min.
10
Typ.
17
2100
260
65
Max.
Unit
9fs (*)
C,ss
COSH
Crss
VDS = 15 V
V
D
s = 25 V
ID = 19 A
f = 1 MHz
V
GS
= 0
S
PF
pF
P
F
SWITCHING
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
Min.
Typ.
40
200
220
110
Max.
Unit
VDD = 30 V
RGS = 50
Q.
ID = 18 A
VGS = 10 V
td(off)
tf
ns
ns
ns
ns
51mcu
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