, O
ne..
U
20
STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
BUZ 80A
(212)227-6005
FAX: (973) 376-8960
Type
BUZ 80A
YDS
800V
ID
3A
^DS(on)
30
Package
TO-220 AB
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
R
GS
=
20 kQ
Symbol
Values
Unit
VDS
^DGR
800
V
800
Continuous drain current
T
c
=
50 °C
ID
3
/Dpuls
A
Pulsed drain current
T
c
=
25 °C
12
Gate source voltage
Power dissipation
T
c
=
25 °C
VGS
^tot
±20
V
W
75
7]
J
/ ctn
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
-55
-55
<1.67
75
E
+ 150 °C
+ 150
K/W
stg
ftthJC
^thJA
55/150/56
Pin1
Pin 2
D
Pin 3
Quality Semi-Conductors
^^mi-Conductor '[Product*.,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX:
(973) 376-8960
BUZ 80A
Electrical Characteristics,
at 7] = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, /
D
= 0.25 mA, 7j = 25 °C
^(BR)DSS
typ.
max.
V
800
-
-
Gate threshold voltage
^GS
=V
t)S, /D=
1 mA
^GS(th)
2.1
3
4
M
A
Zero gate voltage drain current
foss
-
-
/GSS
Vbs = soo v, VQS = o v, Tj = 25 °C
V
DS
= 800 V,
V
GS
=
0 V, 7] = 125 °C
20
100
250
1000
nA
100
Q
Gate-source leakage current
VQS =
20 V, Vbs = 0 V
-
^DS(on)
10
Drain-Source on-resistance
l/
G S
=10V,/
D
=1.5A
-
2.7
3
Quality Semi-Conductors
, D
nc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BUZ 80A
Electrical Characteristics,
at
T\ 25°C,
unless otherwise specified
Parameter
Symbol
Values
Unit
min.
Dynamic Characteristics
Transconductance
V
DS
> 2 * /
D
* /?DS(on)max, /D =
1
-
5 A
Input capacitance
flfs
1
Qss
typ.
max.
S
1.8
pF
1600
2100
VQS
= 0 V, Vbs = 25 V,
f
= 1 MHz
Output capacitance
c
oss
90
Qss
30
55
150
I/GS = 0 V, V
DS
= 25 V,
f=
1 MHz
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
=
25 V,
f =
1 MHz
Turn-on delay time
'd(on)
ns
30
45
V
DD
= 30V, V
GS
= 10V, /
D
= 3 A
R
G
Q
= 50 Q
Rise time
V
DD
= 30V, l/
G S
=10V,/
D
= 3 A
R
GS
= 50 Q
tr
40
60
Turn-off delay time
V
DD
= 30V, V
G
s = 10V,/
D
= 3A
R
GS
= 50 Q
<d(off)
110
<f
60
80
140
Fall time
V
DD
= 30V, l/
GS
= 10V, /
D
= 3 A
RGS
= 50 Q
Quality Semi-Conductors
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