,
L/nc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Low-voltage stabistors
FEATURES
• Low-voltage stabilization
• Forward voltage range: 1.4 to 3.2 V
• Total power dissipation:
max. 330 mW
• Differential resistance range:
max. 20 to 35 i.
i
APPLICATIONS
• Power clipping
• Level shifting
• Low-voltage regulation
• Temperature stabilization.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VR
The diodes
are
type branded.
BZV86 series
DESCRIPTION
Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass
package. The series consists of four types: BZV86-1V4 to BZV86-3V2.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
PARAMETER
continuous reverse voltage
continuous forward current
BZV86-1V4
BZV86-2VO
BZV86-2V6
BZV86-3V2
CONDITIONS
MIN.
-
-
-
-
-
-
-65
-
MAX.
10
200
150
125
100
330
+150
150
V
UNIT
IF
mA
mA
mA
mA
mW
°C
°C
Plot
T
stg
Tj
total power dissipation
storage temperature
junction temperature
Tart^S'C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Low-voltage stabistors
ELECTRICAL CHARACTERISTICS
TJ = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
BZV86-1V4
BZV86-2VO
BZV86-2V6
BZV86-3V2
CONDITIONS
BZV86 series
MIN.
1.30
1.85
2.35
2.85
TYP.
-
-
-
-
-
55
80
90
100
10
15
18
20
6
8
9
10
-3.8
-6.0
-8.5
-11.5
15
MAX.
1.50
2.15
2.80
3.45
200
-
-
-
-
20
30
32.5
35
10
15
17.5
20
-
-
-
-
25
V
V
V
V
UNIT
V
F
IF = 5 mA; see Fig. 2
IR
r
dif
reverse current
differential resistance
BZV86-1V4
BZV86-2VO
BZV86-2V6
BZV86-3V2
differential resistance
BZV86-1V4
BZV86-2VO
BZV86-2V6
BZV86-3V2
V
R
= 5 V
IF = 1 mA; f = 1 kHz
-
-
-
-
-
nA
£i
Q
n
n
a
a
a
n
a
n
ii
n
mV/K
mV/K
mV/K
mV/K
PF
r
dif
IF = 5 mA; f = 1 kHz
-
-
-
-
l
F
= 1 0 m A ; f = 1 kHz
r<iif
differential resistance
BZV86-1V4
BZV86-2VO
BZV86-2V6
BZV86-3V2
-
-
-
-
IF = 5 mA
-
-
-
-
V
R
= 0 V; f = 1 MHz
-
S
F
temperature coefficient
BZV86-1V4
BZV86-2VO
BZV86-2V6
BZV86-3V2
c
d
diode capacitance
THERMAL CHARACTERISTICS
SYMBOL
R|h
j-tp
Rth j-a
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
8 mm from the body
lead length 10mm
VALUE
UNIT
300
380
K/W
K/W
Microchip MCU
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