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CEP5175

Description
P-Channel Enhancement Mode Field Effect Transistor
File Size674KB,5 Pages
ManufacturerCET
Websitehttp://www.cetsemi.com
Download Datasheet Compare View All

CEP5175 Overview

P-Channel Enhancement Mode Field Effect Transistor

P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-55V, -50A, R
DS(ON)
= 23mΩ @V
GS
= 10V.
R
DS(ON)
= 28mΩ @V
GS
= 4.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D
CEP5175/CEB5175
PRELIMINARY
D
G
G
D
S
S
CEB SERIES
TO-263(DD-PAK)
G
CEP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ T
C
= 25 C
@ T
C
= 100 C
Drain Current-Pulsed
a
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
stg
Limit
-55
Units
V
V
A
A
A
W
W/ C
C
±
20
-50
-32
-200
96
0.77
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
Limit
1.3
62.5
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2014.Apr
http://www.cetsemi.com

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CEP5175 CEB5175
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