Ordering number : ENA1667A
EMH1405
N-Channel Power MOSFET
30V, 8.5A, 19m
Ω
, Single EMH8
Features
•
•
•
•
http://onsemi.com
ON-resistance RDS(on)1=14m
Ω
(typ)
4V drive
Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm
×0.8mm)
2
Conditions
Ratings
30
±20
8.5
34
1.5
150
-
-55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7045-001
EMH1405-TL-H
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
0.2
0.2
8
5
0.125
Taping Type : TL
Marking
KE
TL
1.7
2.1
LOT No.
1
0.5
2.0
4
0.2
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
EMH8
Electrical Connection
8
7
6
5
0.05
0.75
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
51612 TKIM TC-00002377/60210PE TK IM TC-00002377 No. A1667-1/7
EMH1405
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=8.5A, VGS=0V
VDS=15V, VGS=10V, ID=8.5A
See specified Test Circuit.
VDS=10V, f=1MHz
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=4A
ID=4A, VGS=10V
ID=2A, VGS=4.5V
ID=2A, VGS=4V
Ratings
min
30
1
±10
1.2
4.4
14
24
30
820
130
90
9.5
25
63
28
15
2.6
2.7
0.8
1.2
19
34
42
2.6
typ
max
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
10V
0V
VIN
VDD=15V
ID=4A
RL=5Ω
D
VOUT
VIN
PW=10μs
D.C.≤1%
G
EMH1405
P.G
50Ω
S
Ordering Information
Device
EMH1405-TL-H
Package
EMH8
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1667-2/7
EMH1405
4.0
ID -- VDS
4.5V
4.0V
10
9
ID -- VGS
VDS=10V
3.5
3.0
2.5
2.0
1.5
1.0
3.0V
8
Drain Current, ID -- A
Drain Current, ID -- A
6.0V
7
6
5
16.0V
10.0V
Ta=75
°
C
0
1
2
4
3
2
1
VGS=2.5V
0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
25
°
C
3
--25
°
C
4
5
IT15388
Drain-to-Source Voltage, VDS -- V
100
RDS(on) -- VGS
IT15387
60
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
12
14
16
50
ID=4A
2A
40
30
20
A
=4.0
2V, I D
=
VGS
=4.5A
2V, I D
=
VGS
A
=10.0
=4V, I D
V GS
10
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
10
|
y
fs
|
-- ID
IT15389
2
10
7
5
Ambient Temperature, Ta --
°
C
IS -- VSD
IT15390
Forward Transfer Admittance,
|
y
fs
|
-- S
7
5
VDS=10V
VGS=0V
2
1.0
7
5
3
2
0.1
7
0.01
°
C
25
0.1
7
5
3
2
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID -- A
2
SW Time -- ID
5 7 10
IT15391
0.01
0
0.2
0.4
Ta=
7
3
2
5
°
C
25
°
C
--25
°
C
0.6
0.8
C
5
°
--2
=
°
C
Ta
75
Source Current, IS -- A
3
3
2
1.0
7
5
1.0
1.2
IT15392
Switching Time, SW Time -- ns
100
7
5
3
2
VDD=15V
VGS=10V
3
2
1000
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
f=1MHz
td(off)
Ciss, Coss, Crss -- pF
Ciss
7
5
3
2
tf
td(on)
10
7
5
3
2
0.1
2
3
5
Coss
100
7
5
3
tr
Crss
7
1.0
2
3
5
7
2
10
0
5
10
15
20
25
30
IT15394
Drain Current, ID -- A
IT15393
Drain-to-Source Voltage, VDS -- V
No. A1667-3/7
EMH1405
10
9
VGS -- Qg
VDS=15V
ID=8.5A
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
ASO
IDP=34A (PW
≤
10
μs)
ID=8.5A
10
10
10
μ
s
0
1m
μ
s
s
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
IT15395
op
s
era
tio
n(
Ta
Operation in this area
=2
5
°
is limited by RDS(on).
C)
DC
10
ms
0m
0.01
0.01
Ta=25°C
Single pulse
When mounted on ceramic substrate
(1200mm
2
×0.8mm)
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
5
Total Gate Charge, Qg -- nC
2.0
PD -- Ta
Drain-to-Source Voltage, VDS -- V
IT15510
Allowable Power Dissipation, PD -- W
1.8
1.6
1.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
When mounted on ceramic substrate
(1200mm
2
×0.8mm)
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT15511
No. A1667-4/7
EMH1405
Embossed Taping Specification
EMH1405-TL-H
No. A1667-5/7
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