Pb Free Plating Product
ISSUED DATE :2005/01/04
REVISED DATE :
GE03N70
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
600/650/700
V
R
DS(ON)
4.0
I
D
3.3A
The GE03N70 series are specially designed as main switching devices for universal 90~265VAC off-line
AC/DC converter applications. TO-220 type provide high blocking voltage to overcome voltage surge and sag
in the toughest power system with the best combination of fast switching, ruggedized design and
cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for
switch mode power supplies, DC-AC converters and high current high speed switching circuits.
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching Speed
Description
Features
Package Dimensions
REF.
A
b
c
D
E
L4
L5
Millimeter
Min.
Max.
4.40
4.80
0.76
1.00
0.36
0.50
8.60
9.00
9.80
10.4
14.7
15.3
6.20
6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min.
Max.
1.25
1.45
1.17
1.47
13.25
14.25
2.54 REF.
2.60
2.89
3.71
3.96
2.60
2.80
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current , V
GS
@10V
Continuous Drain Current , V
GS
@10V
Pulsed Drain Current
1,
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
2
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
Symbol
-/A/H
V
DS
V
GS
I
D
@T
C
=25 :
I
D
@T
C
=100 :
I
DM
P
D
@T
C
=25 :
E
AS
I
AR
E
AR
Tj, Tstg
Ratings
600/650/700
f 20
3.3
2.1
13.2
45
0.36
85
3.3
3.3
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
mJ
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
Value
2.8
62
Unit
/W
/W
1/5
ISSUED DATE :2005/01/04
REVISED DATE :
Electrical Characteristics(Tj = 25
Parameter
Unless otherwise specified)
Min.
600
Typ.
-
-
-
0.6
-
2.0
-
-
-
-
11.4
3.1
4.2
8.4
6
17.7
5.9
600
45
4
Max.
-
-
-
-
4.0
-
D
1
100
500
4.0
-
-
-
-
-
-
-
-
-
-
pF
ns
nC
Unit
V
V
V
V/ :
V
S
uA
uA
uA
Ł
Test Conditions
V
GS
=0, I
D
=250uA
V
GS
=0, I
D
=250uA
V
GS
=0, I
D
=250uA
-
A
H
Symbol
Drain-Source Breakdown Voltage
BV
DSS
650
700
Breakdown Voltage Temperature Coefficient
BV
DSS
/
Tj
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Reference to 25 : , I
D
=1mA
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=1.6A
V
GS
= D
20V
V
DS
=600V, V
GS
=0
V
DS
=480V, V
GS
=0
V
GS
=10V, I
D
=1.6A
I
D
=3.3A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=3.3A
V
GS
=10V
R
G
=10 Ł
R
D
=91 Ł
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=
150 :
)
V
GS(th)
g
fs
I
GSS
I
DSS
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Parameter
Forward On Voltage
3
Continuous Source Current (
Body Diode
)
Pulsed Source Current (
Body Diode
)
1
Symbol
V
SD
I
S
I
SM
Min.
-
-
-
Typ.
-
-
-
Max.
1.5
3.3
13.2
Unit
V
A
A
Test Conditions
I
S
=3.3A, V
GS
=0V, Tj=25 :
V
D
= V
G
=0V, V
S
=1.5V
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 : , V
DD
=50V, L=15mH, R
G
=25 Ł , I
AS
=3.3A.
3. Pulse width 300us, duty cycle 2%.
2/5
ISSUED DATE :2005/01/04
REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
Fig 6. Type Power Dissipation
3/5
ISSUED DATE :2005/01/04
REVISED DATE :
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
4/5
ISSUED DATE :2005/01/04
REVISED DATE :
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan:
No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China:
(201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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