PD - 94281C
HFB50HI20C
FRED
Features
•
•
•
•
Reduced RFI and EMI
Reduced Snubbing
Extensive Characterization of Recovery Parameters
Hermetic
Ultrafast, Soft Recovery Diode
V
R
= 200V
I
F(AV)
= 50A
t
rr
= 35ns
Description
These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power
conditioning systems. An extensive characterization of the recovery behavior for different values of current,
temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors
drives and other applications where switching losses are significant portion of the total losses.
Absolute Maximum Ratings
Parameter
V
R
I
F(AV)
I
FSM
P
D
@ T
C
= 25°C
T
J,
T
STG
Cathode to Anode Voltage ( Per Leg )
Continuous Forward Current,
T
C
=107 °C
Single Pulse Forward Current,
T
C
= 25°C ( Per Leg )
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Max.
200
50
300
130
-55 to +150
Units
V
A
W
°C
Note:
D.C. = 50% rect. wave
1/2 sine wave, 60 Hz , P.W. = 8.33 ms
CASE STYLE
(ISOLATED BASE)
ANODE
TO-259AA
COMMON
CATHODE
ANODE
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1
02/20/06
HFB50HI20C
Electrical Characteristics ( Per Leg )@ T
J
= 25°C (unless otherwise specified)
Parameter
V
BR
V
F
Cathode Anode Breakdown Voltage
Forward Voltage
See Fig. 1
Min. Typ. Max. Units
200
—
—
—
—
—
—
—
—
—
—
—
—
8.7
—
1.36
1.20
1.49
0.99
10
100
200
—
µA
µA
pF
nH
V
V
Test Conditions
I
R
= 100µA
I
F
= 25A, T
J
= -55°C
I
F
= 25A, T
J
= 25°C
I
F
= 50A, T
J
= 25°C
I
F
= 25A, T
J
= 125°C
V
R
= V
R
Rated
V
R
= V
R
Rated, T
J
= 125°C
V
R
= 200V
Measured from anode lead to cathode
lead , 6mm ( 0.025 in) from package
See Fig. 2
I
R
Reverse Leakage Current
See Fig. 2
Junction Capacitance, See Fig. 3
Series Inductance
—
—
—
—
C
T
L
S
Dynamic Recovery Characteristics ( Per Leg ) @ T
J
= 25°C (unless otherwise specified)
Parameter
t
rr
t
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
di
(rec)M
/dt1
di
(rec)M
/dt2
Reverse Recovery Time
Reverse Recovery Time
Peak Recovery Current
Reverse Recovery Charge
Peak Rate of Fall of Recovery Current
During t
b
Min. Typ. Max. Units
—
—
—
—
—
—
—
—
—
—
46
84
5.7
12.5
150
595
530
1130
35
—
—
—
—
—
—
—
—
ns
ns
Test Conditions
I
F
= 0.5A,V
R
= 30V, di
f
/dt = 300A/µs
T
J
= 25°C See Fig.
T
J
= 125°C
5
I
F
= 50A
T
J
= 25°C See Fig.
A
A
T
J
= 125°C
6
V
R
= 160V
T
J
= 25°C See Fig.
nC
nC
T
J
= 125°C
7
di
f
/dt = 200A/µs
T
J
= 25°C See Fig.
A/µs
8
A/µs
T
J
= 125°C
Thermal - Mechanical Characteristics
Parameter
R
thJC
Wt
Junction-to-Case, Single Leg Conducting
Weight
Typ.
—
10.9
Max.
0.96
—
Units
°C/W
g
2
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HFB50HI20C
100
100
125°C
10
100°C
75°C
Reverse Current - I R (µA)
1
0.1
25°C
0.01
Instantaneous Forward Current - I F (A)
0.001
0.0001
0
40
80
120
160
200
10
Reverse Voltage - V R (V)
Fig. 2
- Typical Reverse Current Vs. Reverse
Voltage ( Per Leg )
1000
Tj = 25°C
Junction Capacitance - C T (pF)
Tj = 125°C
Tj = -55°C
T J = 25°C
1
0.0
0.4
0.8
1.2
1.6
2.0
100
0
40
80
120
160
200
Forward Voltage Drop - V F (V)
Reverse Voltage - VR (V)
Fig. 1
- Maximum Forward Voltage Drop Vs.
Instantaneous Forward Current ( Per Leg )
1
D = 0.50
Fig. 3
- Typical Junction Capacitance Vs.
Reverse Voltage ( Per Leg )
Thermal Response (Z
thJC
)
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
10
0.01
0.001
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig. 4
- Maximum Thermal Impedance Z
thjc
Characteristics ( Per Leg )
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HFB50HI20C
120
VR = 160V
100
TJ = 125°C
TJ = 25°C
100
IF = 100A
IF = 50A
IF = 25A
trr - ( ns )
80
IF = 25A
60
IRRM - ( A )
IF = 50A
IF = 100A
10
VR = 160V
40
TJ = 125°C
TJ = 25°C
1
100
1000
20
100
1000
dif / dt - ( A / µs )
dif / dt - ( A / µs )
Fig. 5
- Typical Reverse Recovery Vs. di
f
/dt (Per Leg)
Fig. 6
- Typical Recovery Current Vs. di
f
/dt (Per Leg)
10000
100000
IF = 100A
IF = 50A
di ( rec )M / dt - ( A / µs )
1000
IF = 25A
IF = 50A
IF = 100A
IF = 25A
10000
Qrr - ( nC )
100
VR = 160V
TJ = 125°C
TJ = 25°C
10
100
1000
1000
VR = 160V
TJ = 125°C
TJ = 25°C
100
100
1000
dif / dt - ( A / µs )
dif / dt - ( A / µs )
Fig. 7
- Typical Stored Charge Vs. di
f
/dt (Per Leg)
Fig. 8
- Typical di
(rec)M
/dt Vs. di
f
/dt (Per Leg)
4
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HFB50HI20C
3
I
F
t
rr
t
a
t
b
4
REVERSE RECOVERY CIRCUIT
V
R
= 200V
0
Q
rr
2
I
RRM
0.5 I
RRM
di(rec)M/dt
0.75 I
RRM
5
0.01
Ω
L = 70µH
D.U.T.
D
G
IRFP250
S
1
di
f
/dt
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
X I
RRM
Q
rr
=
2
5. di
(rec)M
/dt - Peak rate of change of
current during t
b
portion of t
rr
dif/dt
ADJUST
1. di
f
/dt - Rate of change of current
through zero crossing
2. I
RRM
- Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
Fig. 9
- Reverse Recovery Parameter Test Circuit
Fig. 10
- Reverse Recovery Waveform and Definitions
Case Outline and Dimensions — TO-259AA
QDIÃ6TTDBIH@IUT
1 = ANODE 1
2 = COMMON CATHODE
3 = ANODE 2
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER :
205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/2006
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5