ICTE-5 thru ICTE-45C
Transient Voltage Suppressor
Breakdown Voltage 5.0 to 45 Volts
Peak Pulse Power
1500 Watts
Features
CASE: DO-201AD (DO-27)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
@
Symbol
P
PPM
I
PPM
I
FSM
V
F
R
θJL
R
θJA
Conditions
Peak pulse power capability with a 10/1000μs
Peak pulse current with a 10/1000μs
打
效
无
印
Application
Breakdown Voltages (V
BR
) from 5.0 to 45V
1500W peak pulse power capability with a 10/1000μs
waveform, repetitive rate (duty cycle):0.01%
Fast Response Time
Low incremental surge resistance
Excellent clamping capability
Available in uni-directional and bi-directional
High temperature soldering guaranteed: 265
℃
/10
seconds, 0.375” (9.5mm) lead length, 5lbs. (2.3kg)
tension
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on IC
S
, MOSFE, signal lines of sensor units for
consumer, computer, industrial, automotive and
telecommunication
Case:
Void-free transfer molded thermosetting epoxy
body meeting UL94V-O
Terminals:
Tin-Lead or ROHS Compliant annealed
matte-Tin plating readily solderable per MIL-STD-750,
Method 2026
Marking:
Part number and polarity diode symbol
Polarity:
Cathode indicated by band
Weight:
1.2g（Approximately）
25
O
C unless otherwise specified
Mechanical Data
Value
1500
SEE TABLE
5
200
3.5
22
82
Unit
W
A
W
A
V
℃/W
℃/W
P
M(AV)
Steady state power dissipation at T
L
=40℃ ,Lead lengths 0.375”(10mm)
Peak forward surge current,8.3ms single half sine-wave unidirectional only⑴
Maximum instantaneous forward voltage at 100A for unidirectional only
Thermal resistance junction to lead
Thermal resistance junction to ambient
T
J,
T
STG
Operating and Storage Temperature
-65 to +150
℃
Notes:
⑴
Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum
Document Number: ICTE-5 thru ICTE-45C
Feb.29,2012
www.smsemi.com
1
ICTE-5 thru ICTE-45C
Electrical Characteristics @ 25°C (Unidirectional) TABLE
Microsemi
Part
Number
Breakdown
Voltage
V
BR
@ I
BR
MIN
V
BR
(V)
ICTE-5
ICTE-8
ICTE-10
ICTE-12
ICTE-15
ICTE-18
ICTE-22
ICTE-36
ICTE-45
6.00
9.40
11.7
14.1
17.6
21.2
25.9
42.4
52.9
7.00
10.39
12.93
15.58
19.45
23.43
28.63
46.86
58.47
MAX
I
BR
(mA)
1
1
1
1
1
1
1
1
1
Stand
Off
Voltage
(Note1)
V
WM
(V)
5.0
8.0
10.0
12.0
15.0
18.0
22.0
36.0
45.0
Maximum
Reverse
current
I
D
@ V
WM
I
D
(µA)
300
25
2
2
2
2
2
2
2
Maximum
Peak
Pulse
Current
I
PP
(A)
160
100
90
70
60
50
40
23
19
Maximum
Clamping
Voltage
V
C
@ I
PP
I
PP1
=1A
V
C
(V)
7.1
11.3
13.7
16.1
20.1
24.2
29.8
50.6
63.3
I
PP2
=10A
V
C
(V)
7.5
11.5
14.1
16.5
20.6
25.2
32.0
54.3
70.0
V
F
at 100amps peak, 8.3msec sine wave equals 3.5volts maximum.
Electrical Characteristics @ 25°C (Test Both Polarities for Bidirectional) TABLE
Microsemi
Part
Number
Breakdown
Voltage
V
BR
@ I
BR
MIN
V
BR
(V)
ICTE-5C
ICTE-8C
ICTE-10C
ICTE-12C
ICTE-15C
ICTE-18C
ICTE-22C
ICTE-36C
ICTE-45C
6.00
9.40
11.7
14.1
17.6
21.2
25.9
42.4
52.9
7.00
10.39
12.93
15.58
19.45
23.43
28.63
46.86
58.47
MAX
I
BR
(mA)
1
1
1
1
1
1
1
1
1
Stand
Off
Voltage
(Note1)
V
WM
(V)
5.0
8.0
10.0
12.0
15.0
18.0
22.0
36.0
45.0
Maximum
Reverse
current
I
D
@ V
WM
I
D
(µA)
300
25
2
2
2
2
2
2
2
C Suffix indicates Bidirectional
Note1.TVS devices are normally selected according to the reverse “Stand Off Voltage” (V
WM
) which should be equal to or greater
than the dc or continuous peak operating voltage level.
Characteristic Curve
100
I
PP
t
W
I
PP
- Peak Pulse Current - % I
PP
P
PP
- Peak Pulse Power (kW)
印
打
1.0
I
PP
0.5
Impulse
Exponential
Decay
t
W
t
p
Half Sine
t
W
=0.71
p
Square
Wave
t
W
Current Waveforms
效
无
Maximum
Peak
Pulse
Current
I
PP
(A)
160
100
90
70
60
50
40
23
19
Maximum
Clamping
Voltage
V
C
@ I
PP
I
PP1
=1A
V
C
(V)
7.1
11.4
14.1
16.7
20.8
24.8
30.8
50.6
63.3
I
PP2
=10A
V
C
(V)
7.5
11.6
14.5
17.1
21.4
25.5
32.0
54.3
70.0
t
r
=10µs
Peak Value I
PP
Pulse time duration (t
p
)
is defined as that point
where ip decays to 50%
of peak value (I
PP
)
Half Value I
PP
2
10/1000µs Waveform
as defined by R.E.A.
150
100
10
50
1.0
0.1
1.0
10
t
P
-Pulse Time (
µs)
10
2
10
3
0
0
1.0
2.0
t-Time (ms)
3.0
4.0
Fig. 1 Peak Pulse Power vs. Pulse Time
Document Number: ICTE-5 thru ICTE-45C
Feb.29,2012
Fig.2 Pulse Waveform for Exponential Surge
www.smsemi.com
2
ICTE-5 thru ICTE-45C
100
P
PP
-Peak Pulse Power or continuous
Average Power in Percent of 25
℃
(%)
Peak Pulse Power
(Single pulse).
10
5
C
J
– Junction Capacitance (pF)
75
10
4
Measured at
Zero Bias
50
25
Average
Power
10
3
Measured at
Stand-off Voltage
0
0
50
100
150
Lead or Ambient Temperature (℃)
200
10
2
Fig.3 Derating Curve
10
5
C
J
– Junction Capacitance (pF)
10
10
4
Measured at
Zero Bias
10
10
2
40
V
C
– Clamping Voltage (V)
ICTE-15
ICTE-18
20
10
4
1
1
10
Ipp – Peak Pulse Current (A)
100
Fig.7 Typical Capacitance Clamping Voltage
vs. Peak Pulse Current
Document Number: ICTE-5 thru ICTE-45C
Feb.29,2012
ICTE-22
印
打
3
10
Measured at
Stand-off Voltage
效
无
Fig.4 Typical Capacitance vs.
Breakdown Voltage (Unidirectional)
3
1
10
VBR – Breakdown Voltage (V)
100
T
J
=T
J
Max.
8.3ms Single Half Sine-Wave
Peak Forward Surge Current (A)
2
10
1
10
Number of Cycles at 60H
Z
100
1
10
VBR – Breakdown Voltage (V)
100
Fig.5 Typical Capacitance vs.
Breakdown Voltage (Bidirectional)
Fig.6 Max. Non-Repetitive Forward Surge Current
Uni-Directional Only
ICTE-5
ICTE-8
ICTE-10
ICTE-12
www.smsemi.com
3
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
