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IPW60R045CS

Description
CoolMOSTM Power Transistor
CategoryDiscrete semiconductor    The transistor   
File Size364KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

IPW60R045CS Overview

CoolMOSTM Power Transistor

IPW60R045CS Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeTO-247
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)1950 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)60 A
Maximum drain current (ID)60 A
Maximum drain-source on-resistance0.045 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-247
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)431 W
Maximum pulsed drain current (IDM)230 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
IPW60R045CP
CoolMOS
TM
Power Transistor
Features
• Worldwide best
R
ds,on
in TO247
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V
DS
@ T
jmax
R
DS(on),max
Q
g,typ
650
0.045
150
V
nC
PG-TO247-3-1
CS CoolMOS is specially designed for:
• Hard switching SMPS topologies
Type
IPW60R045CP
Package
PG-TO247-3-1
Ordering Code
SP000067149
Marking
6R045
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Avalanche energy, repetitive
t
AR2),3)
Avalanche current, repetitive
t
AR2),3)
MOSFET dv /dt ruggedness
Gate source voltage
I
D,pulse
E
AS
E
AR
I
AR
dv /dt
V
GS
V
DS
=0...480 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
Mounting torque
Rev. 2.0
P
tot
T
j
,
T
stg
M3 and M3.5 screws
page 1
T
C
=25 °C
T
C
=25 °C
I
D
=11 A,
V
DD
=50 V
I
D
=11 A,
V
DD
=50 V
Value
60
38
230
1950
3
11
50
±20
±30
431
-55 ... 150
60
W
°C
Ncm
2006-06-19
A
V/ns
V
mJ
Unit
A

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