IQBD30E120A1
IQBD30E120A1
Pb Free Plating Product
Pb
®
30.0 Ampere SwitchMode Single Fast Recovery Epitaxial Diode
TO-247-2L
Cathode(Bottom Side Metal Heatsink)
APPLICATION
·
·
·
·
·
·
·
Freewheeling, Snubber, Clamp
Inversion Welder
PFC
Plating Power Supply
Ultrasonic Cleaner and Welder
Converter & Chopper
UPS
PRODUCT FEATURE
·
Ultrafast Recovery Time
·
Soft Recovery Characteristics
·
Low Recovery Loss
·
Low Forward Voltage
·
High Surge Current Capability
·
Low Leakage Current
Internal Configuration
Base Backside
Anode
Cathode
GENERAL DESCRIPTION
IQBD30E120A1 using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
R
V
RRM
I
F(AV)
I
F(RMS)
I
FSM
P
D
T
J
T
STG
Torque
R
θJC
Weight
Parameter
Maximum D.C. Reverse Voltage
Maximum Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non-Repetitive Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Module-to-Sink
Thermal Resistance
T
C
=110°C
T
C
=110°C
T
C
=25°C unless otherwise specified
Test Conditions
Values
1200
1200
30
42
300
115
-40 to +150
-40 to +150
Recommended（M3）
Junction-to-Case
1.1
1.1
7.0
Unit
V
V
A
A
A
W
°C
°C
N·m
°C /W
g
T
J
=45°C, t=10ms, 50Hz, Sine
ELECTRICAL CHARACTERISTICS
Symbol
I
RM
Parameter
Reverse Leakage Current
Test Conditions
V
R
=1200V
V
R
=1200V, T
J
=125°C
Forward Voltage
Reverse Recovery Time
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Time
Max. Reverse Recovery Current
I
F
=30A
I
F
=30A, T
J
=125°C
T
C
=25°C unless otherwise specified
Min.
--
--
--
--
--
--
--
--
--
Typ.
--
--
2.15
1.75
30
160
5
300
11
Max.
100
1
2.5
--
--
--
--
--
--
Unit
µA
mA
V
V
ns
ns
A
ns
A
V
F
t
rr
t
rr
I
RRM
t
rr
I
RRM
I
F
=1A, V
R
=30V, di
F
/dt=-200A/μs
V
R
=600V, I
F
=30A
di
F
/dt=-200A/μs, T
J
=25°C
V
R
=600V, I
F
=30A
di
F
/dt=-200A/μs, T
J
=125°C
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/3
http://www.thinkisemi.com/
IQBD30E120A1
®
60
50
40
I
F
(A)
30
20
T
J
=25°C
T
J
=125°C
500
V
R
=600V
T
J
=125°C
400
I
F
=60A
t
rr
(ns)
300
200
I
F
=30A
I
F
=15A
10
0
0
100
2.0
3.0
1.5
2.5
V
F
（V）
Fig1. Forward Voltage Drop vs Forward Current
0.5
1.0
0
0
400
600
800
1000
di
F
/dt（A/μs）
Fig2. Reverse Recovery Time vs di
F
/dt
200
50
V
R
=600V
T
J
=125°C
5
V
R
=600V
T
J
=125°C
40
I
F
=60A
4
I
F
=60A
I
RRM
(A)
I
F
=30A
20
Q
rr
(μc)
30
3
I
F
=15A
2
I
F
=30A
10
1
I
F
=15A
0
0
400
600
1000
800
di
F
/dt（A/μs）
Fig3. Reverse Recovery Current vs di
F
/dt
200
0
0
400
600
800
1000
di
F
/dt（A/μs）
Fig4. Reverse Recovery Charge vs di
F
/dt
200
1.4
1.2
1.0
0.8
K
f
0.6
t
rr
10
1
Z
thJC
(K/W)
10
-1
Duty
0.5
0.2
0.1
0.05
Single Pulse
0.4
0.2
0
0
I
RRM
Q
rr
10
-2
100 125 150
75
T
J
(°C)
Fig5. Dynamic Parameters vs Junction Temperature
.
.
25
50
10
-3
10
-4
.
10
10
10
1
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
-3
-2
-1
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/3
http://www.thinkisemi.com/
IQBD30E120A1
®
I
F
t
rr
I
RRM
Q
rr
0.25 I
RRM
dI
F
/dt
0.9 I
RRM
Fig7. Diode Reverse Recovery Test Circuit and Waveform
D
Ejector pin hole thickness (h)
A
c1
H
E1
L2
E2
L
L1
Ø
A1
b1
e
b
c
TO-247-2L DIMENSIONS
SYMBOL
A
A1
b
b1
c
c1
D
E1
E2
L
L1
L2
Ø
e
H
h
0.000
40.900
24.800
20.300
7.100
10.900 Typ.
5.980 Typ.
0.300
0.000
DIMENSIONS IN MILLIMETERS
MIN.
4.850
2.200
1.000
1.800
0.500
1.900
15.450
3.500 Ref.
3.600 Ref.
41.300
25.100
20.600
7.300
1.610
0.976
0.799
0.280
0.429 Typ.
0.235 Typ.
0.012
MAX.
5.150
2.600
1.400
2.200
0.700
2.100
15.750
DIMENSIONS IN INCHES
MIN.
0.191
0.087
0.039
0.071
0.020
0.075
0.608
0.138 Ref.
0.142 Ref.
1.626
0.988
0.811
0.287
MAX.
0.200
0.102
0.055
0.087
0.028
0.083
0.620
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 3/3
http://www.thinkisemi.com/
京公网安备 11010802033920号
EEWORLD
