IR1166S
SMARTRECTIFIER
TM
CONTROL IC
Features
•
Secondary side high speed SR controller
•
DCM, CrCM and CCM flyback topologies
•
200 V proprietary IC technology
•
Max 500 KHz switching frequency
•
Anti-bounce logic and UVLO protection
•
4 A peak turn off drive current
•
Micropower start-up & ultra low quiescent current
•
10.7 V gate drive clamp
•
50 ns turn-off propagation delay
•
Vcc range from 11.3 V to 20 V
•
Direct sensing of MOSFET drain voltage
•
Minimal component count
•
Simple design
•
Lead-free
•
Compatible with 1 W Standby, Energy Star, CECP, etc.
Product Summary
Topology
VD
V
OUT
I
o+
& I
o-
(typ.)
Turn on Propagation
Delay (typ.)
Turn off Propagation
Delay (typ.)
Flyback
200 V
10.7 V
+1 A & -4 A
52 ns
35 ns
Package Options
Typical Applications
•
LCD & PDP TV, Telecom SMPS, AC-DC adapters,
ATX SMPS, Server SMPS
8-Lead SOIC
Ordering Information
Standard Pack
Base Part Number
IR1166S
Package Type
Form
SOIC8N
Tape and Reel
Quantity
2500
IR1166STRPBF
Complete Part Number
1
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© 2013 International Rectifier
Nov 6, 2013
IR1166S
Typical Connection Diagram
Vin
Rs
XFM
Cs
1
Ci
2
3
RMOT
4
Rdc
U1
VCC
OVT
MOT
EN
VGATE
GND
VS
VD
8
7
6
5
Rg
Cdc
Co
IR1166S
IR11671
Rtn
Q1
2
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© 2013 International Rectifier
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Nov 6, 2013
IR1166S
Table of Contents
Ordering Information
Description
Absolute Maximum Ratings
Electrical Characteristics
Functional Block Diagram
Lead Definitions
Lead Assignments
Detailed Pin Description
Application Information and Additional Details
Package Details
Tape and Reel Details
Part Marking Information
Qualification Information
Page
1
4
5
6
8
9
9
10
11
22
23
24
25
3
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© 2013 International Rectifier
Nov 6, 2013
IR1166S
Description
IR1166S is a smart secondary side driver IC designed to drive N-Channel power MOSFETs used as synchronous
rectifiers in isolated Flyback converters. The IC can control one or more paralleled N-MOSFETs to emulate the
behavior of Schottky diode rectifiers. The drain to source voltage is sensed differentially to determine the polarity of
the current and turn the power switch on and off in proximity of the zero current transition. Ruggedness and noise
immunity are accomplished using an advanced blanking scheme and double-pulse suppression which allow
reliable operation in continuous, discontinuous and critical current mode operation and both fixed and variable
frequency modes.
4
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© 2013 International Rectifier
Nov 6, 2013
IR1166S
Absolute Maximum Ratings
Stress beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only and functional operation of the device at these conditions are not implied. All
voltages are absolute voltages referenced to GND. Thermal resistance and power dissipation are measured under
board mounted and still air conditions.
Parameters
Supply Voltage
Enable Voltage
Cont. Drain Sense Voltage
Pulse Drain Sense Voltage
Source Sense Voltage
Gate Voltage
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Package Power Dissipation
ESD Protection
Switching Frequency
†
Symbol
V
CC
V
EN
V
D
V
D
V
S
V
GATE
T
J
T
S
R
ΘJA
P
D
V
ESD
fsw
Min.
-0.3
-0.3
-3
-5
-3
-0.3
-40
-55
Max.
20
20
200
200
20
20
150
150
128
970
1.5
500
Units
Remarks
V
V
CC
=20V, Gate off
°C
°C/W
mW
kV
kHz
SOIC-8
SOIC-8, T
AMB
=25°C
†
Human Body Model
Per EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5kΩ series resistor).
5
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© 2013 International Rectifier
Nov 6, 2013
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