Data Sheet No. PD60043
Rev.O
IR2101
(S)
/IR2102
(S) &(PbF)
HIGH AND LOW SIDE DRIVER
Features
•
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout
3.3V, 5V, and 15V logic input compatible
Matched propagation delay for both channels
Outputs in phase with inputs (IR2101) or out of
phase with inputs (IR2102)
Also available LEAD-FREE
Product Summary
V
OFFSET
I
O
+/-
V
OUT
t
on/off
(typ.)
Delay Matching
600V max.
130 mA / 270 mA
10 - 20V
160 & 150 ns
50 ns
•
•
•
•
•
•
Packages
Description
The IR2101(S)/IR2102(S) are high voltage, high speed
power MOSFET and IGBT drivers with independent
high and low side referenced output channels. Pro-
8-Lead SOIC
8-Lead PDIP
prietary HVIC and latch immune CMOS technologies
IR2101S/IR2102S
IR2101/IR2102
enable ruggedized monolithic construction. The logic
input is compatible with standard CMOS or LSTTL
output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum
driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in
the high side configuration which operates up to 600 volts.
Typical Connection
up to 600V
V
CC
V
CC
HIN
LIN
V
B
HO
V
S
LO
TO
LOAD
HIN
LIN
COM
IR2101
V
CC
up to 600V
V
CC
HIN
V
B
HO
V
S
LO
TO
LOAD
HIN
LIN
COM
(Refer to Lead Assignments for correct pin
configuration). This/These diagram(s) show
electrical connections only. Please refer to
our Application Notes and DesignTips for
proper circuit board layout.
LIN
IR2102
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1
IR2101
(S)
/IR2102
(S) & (PbF)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Symbol
V
B
V
S
V
HO
V
CC
V
LO
V
IN
dV
S
/dt
P
D
Rth
JA
T
J
T
S
T
L
Definition
High side floating supply voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Logic input voltage (HIN & LIN)
Allowable offset supply voltage transient
Package power dissipation @ T
A
≤
+25°C
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
(8 lead PDIP)
(8 lead SOIC)
(8 lead PDIP)
(8 lead SOIC)
Min.
-0.3
V
B
- 25
V
S
- 0.3
-0.3
-0.3
-0.3
—
—
—
—
—
—
-55
—
Max.
625
V
B
+ 0.3
V
B
+ 0.3
25
V
CC
+ 0.3
V
CC
+ 0.3
50
1.0
0.625
125
200
150
150
300
Units
V
V/ns
W
°C/W
°C
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
offset rating is tested with all supplies biased at 15V differential.
Symbol
V
B
V
S
V
HO
V
CC
V
LO
V
IN
T
A
Definition
High side floating supply absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Logic input voltage (HIN & LIN) (IR2101) & (HIN & LIN) (IR2102)
Ambient temperature
Min.
V
S
+ 10
Note 1
V
S
10
0
0
-40
Max.
V
S
+ 20
600
V
B
20
V
CC
V
CC
125
Units
V
°C
Note 1:
Logic operational for V
S
of -5 to +600V. Logic state held for V
S
of -5V to -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
2
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IR2101
(S)
/IR2102
(S) & (PbF)
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, C
L
= 1000 pF and T
A
= 25°C unless otherwise specified.
Symbol
ton
toff
tr
tf
MT
Definition
Turn-on propagation delay
Turn-off propagation delay
Turn-on rise time
Turn-off fall time
Delay matching, HS & LS turn-on/off
Min. Typ. Max. Units Test Conditions
—
—
—
—
—
160
150
100
50
—
220
220
170
90
50
ns
V
S
= 0V
V
S
= 600V
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V and T
A
= 25°C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to
COM. The V
O
and I
O
parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
Symbol
V
IH
V
IL
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
IN+
I
IN-
V
CCUV+
V
CCUV-
I
O+
Definition
Logic “1” input voltage (IR2101)
Logic “0” input voltage (IR2102)
Logic “0” input voltage (IR2101)
Logic “1”input voltage (IR2102)
High level output voltage, V
BIAS
- V
O
Low level output voltage, V
O
Offset supply leakage current
Quiescent V
BS
supply current
Quiescent V
CC
supply current
Logic “1” input bias current
Logic “0” input bias current
V
CC
supply undervoltage positive going
threshold
V
CC
supply undervoltage negative going
threshold
Output high short circuit pulsed current
Min. Typ. Max. Units Test Conditions
3
—
—
—
—
—
—
—
—
—
—
—
—
30
150
3
—
V
0.8
100
100
50
55
270
10
µA
mV
V
CC
= 10V to 20V
I
O
= 0A
I
O
= 0A
V
B
= V
S
= 600V
V
IN
= 0V or 5V
V
IN
= 0V or 5V
V
IN
= 5V (IR2101)
V
IN
= 0V (IR2102)
—
8
7.4
130
—
8.9
8.2
210
1
9.8
9
—
mA
V
V
IN
= 0V (IR2101)
V
IN
= 5V (IR2102)
V
CC
= 10V to 20V
V
O
= 0V
V
IN
= Logic “1”
PW
≤
10
µs
V
O
= 15V
V
IN
= Logic “0”
PW
≤
10
µs
I
O-
Output low short circuit pulsed current
270
360
—
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3
IR2101
(S)
/IR2102
(S) & (PbF)
Functional Block Diagram
V
B
Q
PULSE
FILTER
R
S
V
S
HO
HV
LEVEL
SHIFT
HIN
PULSE
GEN
UV
DETECT
V
CC
LIN
LO
COM
IR2101
V
B
Q
PULSE
FILTER
R
S
V
S
HO
Vcc
HIN
HV
LEVEL
SHIFT
PULSE
GEN
Vcc
LIN
UV
DETECT
V
CC
LO
COM
IR2102
4
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IR2101
(S)
/IR2102
(S) & (PbF)
Lead Definitions
Symbol
HIN
HIN
LIN
LIN
V
B
HO
V
S
V
CC
LO
COM
Description
Logic input for high side gate driver output (HO), in phase (IR2101)
Logic input for high side gate driver output (HO), out of phase (IR2102)
Logic input for low side gate driver output (LO), in phase (IR2101)
Logic input for low side gate driver output (LO), out of phase (IR2102)
High side floating supply
High side gate drive output
High side floating supply return
Low side and logic fixed supply
Low side gate drive output
Low side return
Lead Assignments
8 Lead PDIP
8 Lead SOIC
IR2101
IR2101S
8 Lead PDIP
8 Lead SOIC
IR2102
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IR2102S
5
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