PD-60086C
IR2110E4
Features
n
Floating channel designed for bootstrap operation
Fully operational to +400V
Tolerant to negative transient voltage
dV/dt immune
n
Gate drive supply range from 10 to 20V
n
Undervoltage lockout for both channels
n
Separate logic supply range from 5 to 20V
Logic and power ground ±5V offset
n
CMOS Schmitt-triggered inputs with pull-down
n
Cycle by cycle edge-triggered shutdown logic
n
Matched propagation delay for both channels
n
Outputs in phase with inputs
HIGH AND LOW SIDE DRIVER
Product Summary
V
OFFSET
I
O
+/-
V
OUT
t
on/off
(typ.)
Delay Matching
400V max.
2A / 2A
10 - 20V
120ns & 94ns
10ns
Description
The IR2110E4 is a high voltage, high speed power
MOSFET and IGBT driver with independent high and low
side referenced output channels. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized
monolithic construction. Logic inputs are compatible with
standard CMOS or LSTTL outputs. The output drivers
feature a high pulse current buffer stage designed for
minimum driver cross-conduction. Propagation delays
are matched to simplify use in high frequency applications.
The floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configuration
which operates up to 400 volts.
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are
measured under board mounted and still air conditions. Additional information is shown in Figures 28 through 35.
Symbol
V
B
V
S
V
HO
V
CC
V
LO
V
DD
V
SS
V
IN
dV
S
/dt
P
D
R
thJA
T
j
T
S
T
L
Parameter
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Supply Voltage
Logic Supply Offset Voltage
Logic Input Voltage (HIN, LIN & SD)
Allowable Offset Supply Voltage Transient (Fig. 16)
Package Power Dissipation @ T
A
≤
= 25°C (Fig. 19)
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Package Mounting Surface Temperature
Weight
Min.
Max.
Units
-0.5
V
S
+ 20
—
400
V
S
-0.5
V
B
+ 0.5
-0.5
20
-0.5
V
CC
+ 0.5
-0.5
V
SS
+ 20
V
CC
- 20
V
CC
+ 0.5
V
SS
- 0.5
V
DD
+ 0.5
—
50
—
1.6
—
125
-55
125
-55
150
300 (for 5 seconds)
0.45 (typical)
V
V/ns
W
°C/W
°C
g
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1
05/02/11
IR2110E4
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be
used within the recommended conditions. The VS and VSS offset ratings are tested with all supplies
biased at 15V differential. Typical ratings at other bias conditions are shown in Figures 36 and 37.
Symbol
VB
VS
VHO
VCC
VLO
VDD
VSS
VIN
Parameter
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Supply Voltage
Logic Supply Offset Voltage
Logic Input Voltage (HIN, LIN & SD)
Min.
VS + 10
-4
VS
10
0
VSS + 5
-5
VSS
Max.
VS + 20
400
VB
20
VCC
VSS + 20
5
VDD
Units
V
Dynamic Electrical Characteristics
VBIAS (VCC, VBS, VDD) = 15V, CL = 1000 pF, TA = 25°C and VSS = COM unless otherwise specified.
The dynamic electrical characteristics are measured using the test circuit shown in Figure 3.
Tj = 25°C
Symbol Parameter
t
on
t
off
t
sd
t
r
t
f
Mt
Turn-On Propagation Delay
Turn-Off Propagation Delay
Shutdown Propagation Delay
Turn-On Rise Time
Turn-Off Fall Time
Delay Matching, HS & LS Turn-On/Off
Min
—
—
—
—
—
—
Tj = -55 to
125°C
Test Conditions
V
S
= 0V
V
S
= 400V
V
S
= 400V
C
L
= 1000pf
C
L
= 1000pf
Ht
on
-Lt
on
/ Ht
off
-Lt
off
—
—
—
—
—
—
260
220
235
50
40
—
Typ. Max. Min. Max Units
120
94
110
25
17
—
150
125
140
35
25
20
nS
Typical Connection
HO
V
DD
HIN
SD
LIN
V
SS
V
CC
V
DD
HIN
SD
LIN
V
SS
V
CC
COM
LO
V
B
V
S
up to
4
500V
TO
LOAD
2
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IR2110E4
Static Electrical Characteristics
VBIAS (VCC, VBS, VDD) = 15V, TA = 25°C and VSS = COM unless otherwise specified. The VIN, VTH and
IIN parameters are referenced to VSS and are applicable to all three logic input leads: HIN, LIN and SD.
The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or
LO.
Tj = 25°C
Symbol
V
IH
V
IL
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
QDD
I
IN+
I
IN-
Parameter
Logic “1” Input Voltage
Logic “0” Input Voltage
High Level Output Voltage, V
BIAS
- V
O
Low Level Output Voltage, VO
Offset Supply Leakage Current
Quiescent V
BS
Supply Current
Quiescent V
CC
Supply Current
Quiescent V
DD
Supply Current
Logic “1” Input Bias Current
Logic “0” Input Bias Current
Min
9.5
—
—
—
—
—
—
—
—
—
7.5
7.0
7.4
7.0
2
2
—
—
0.7
—
—
125
180
5
15
—
8.7
8.3
8.6
8.2
—
—
Tj = -55 to
125°C
Typ. Max. Min. Max Units
—
6
1.2
0.1
50
230
340
30
40
1
9.7
9.4
9.6
9.4
—
—
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.7
1.5
0.1
250
500
600
60
70
10
—
—
—
—
—
—
A
V
OUT
= 0V, V
IN
= 15V
PW < = 10
µs
V
OUT
= 15V, V
IN
= 0V
PW < = 10
µs
V
V
Test Conditions
V
DD
= 15V
V
DD
= 15V
V
IN
= V
IH
, I
O
= 0A
V
IN
= V
IL
, I
O
= 0A
V
B
= V
S
= 400V
V
IN
= V
IH
or V
IL
µA
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
IN
= 15V
V
IN
= 0V
V
BSUV+
V
BS
Supply Undervoltage Positive
Going Threshold
V
BSUV-
V
BS
Supply Undervoltage Negative
Going Threshold
V
CCUV+
V
CC
Supply Undervoltage Positive
Going Threshold
V
CCUV-
V
CC
Supply Undervoltage Negative
Going Threshold
I
O+
Output High Short Circuit Pulsed
Current
I
O-
Output Low Short Circuit Pulsed
Current
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IR2110E4
4
4
Figure 1. Input/Output Timing Diagram
Figure 2. Floating Supply Voltage Transient Test Circuit
11
13
14
15
17
4
8
6
9
1
4
HIN
LIN
ton
50%
50%
tr
90%
toff
90%
tf
2
HO
LO
10%
10%
Figure 3. Switching Time Test Circuit
Figure 4. Switching Time Waveform Definition
HIN
LIN
50%
50%
SD
50%
LO
HO
10%
tsd
MT
MT
90%
HO
LO
90%
LO
Figure 3. Shutdown Waveform Definitions
HO
Figure 6. Delay Matching Waveform Definitions
4
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IR2110E4
250
250
200
Turn-On Delay Time (ns)
Turn-On Delay Time (ns)
200
Max.
150
Max.
150
Typ.
100
Typ.
100
50
50
0
-50
-25
0
25
50
75
100
125
Temperature (°C)
0
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
Figure 7A. Turn-On Time vs. Temperature
Figure 7B. Turn-On Time vs. Voltage
250
250
200
Turn-Off Delay Time (ns)
Turn-Off Delay Time (ns)
200
Max.
150
Max.
Typ.
150
Typ.
100
100
50
50
0
-50
-25
0
25
50
75
100
125
Temperature (°C)
0
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
Figure 8A. Turn-Off Time vs. Temperature
Figure 8B. Turn-Off Time vs. Voltage
250
250
200
Shutdown Delay Time (ns)
Shutdown Delay time (ns)
200
Max.
150
Max.
150
Typ.
100
Typ.
100
50
50
0
-50
-25
0
25
50
75
100
125
Temperature (°C)
0
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
Figure 9A. Shutdown Time vs. Temperature
Figure 9B. Shutdown Time vs. Voltage
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