PD - 91883A
IR2113L6
HIGH AND LOW SIDE DRIVER
Features
n
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
n
Gate drive supply range from 10 to 20V
n
Undervoltage lockout for both channels
n
Separate logic supply range from 5 to 20V
Logic and power ground ±5V offset
n
CMOS Schmitt-triggered inputs with pull-down
n
Cycle by cycle edge-triggered shutdown logic
n
Matched propagation delay for both channels
n
Outputs in phase with inputs
Product Summary
V
OFFSET
I
O
+/-
V
OUT
t
on/off
(typ.)
Delay Matching
600V max.
2A / 2A
10 - 20V
120 & 94 ns
10 ns
Description
The IR2113L6 is a high voltage, high speed power MOSFET
and IGBT driver with independent high and low side referenced
output channels. Proprietary HVIC and latch immune CMOS
technologies enable ruggedized monolithic construction. Logic
inputs are compatible with standard CMOS or LSTTL outputs.
The output drivers feature a high pulse current buffer stage
designed for minimum driver cross-conduction. Propagation
delays are matched to simplify use in high frequency
applications. The floating channel can be used to drive an N-
channel power MOSFET or IGBT in the high side configuration
which operates up to 600 volts.
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power
Dissipation ratings are measured under board mounted and still air conditions.
Symbol
V
B
V
S
V
HO
V
CC
V
LO
V
DD
V
SS
V
IN
dV
S
/dt
P
D
R
thJA
T
j
T
S
T
L
Parameter
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Supply Voltage
Logic Supply Offset Voltage
Logic Input Voltage (HIN, LIN & SD)
Allowable Offset Supply Voltage Transient (Fig. 16)
Package Power Dissipation @ T
A
≤
= 25°C (Fig. 19)
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Package Mounting Surface Temperature
Weight
Min.
-0.5
—
V
S
-0.5
-0.5
-0.5
-0.5
V
CC
- 20
V
SS
- 0.5
—
—
—
-55
-55
Max.
Units
V
S
+ 20
600
V
B
+ 0.5
20
V
CC
+ 0.5
V
SS
+ 20
V
CC
+ 0.5
V
DD
+ 0.5
50
1.6
75
125
150
300
1.5 (typical)
V
V/ns
W
°C/W
°C
g
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1
11/09/05
IR2113L6
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The V S and VSS offset ratings are tested with all supplies biased at 15V differential. Typical
ratings at other bias conditions are shown in Figures 36 and 37.
Symbol
VB
VS
VHO
VCC
VLO
VDD
VSS
VIN
Parameter
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Supply Voltage
Logic Supply Offset Voltage
Logic Input Voltage (HIN, LIN & SD)
Min.
VS + 10
-4
VS
10
0
VSS + 5
-5
VSS
Max.
VS + 20
600
VB
20
VCC
VSS + 20
5
VDD
Units
V
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
, V
DD
) = 15V, and V
SS
= COM unless otherwise specified. The dynamic electrical characteristics are
measured using the test circuit shown in Figure 3.
Tj = 25°C
Parameter
t
on
t
off
t
sd
t
r
t
f
Mt
Turn-On Propagation Delay
Turn-Off Propagation Delay
Shutdown Propagation Delay
Turn-On Rise Time
Turn-Off Fall Time
Delay Matching, HS & LS Turn-On/Off
Min
—
—
—
—
—
—
Tj = -55 to
125°C
Test Conditions
V
S
= 0V
V
S
= 600V
V
S
= 600V
C
L
= 1000pf
C
L
= 1000pf
Ht
on
-Lt
on
/ Ht
off
-Lt
off
—
—
—
—
—
—
260
220
235
50
40
—
Typ. Max. Min. Max Units
120
94
110
25
17
—
150
125
140
35
25
20
ns
Typical Connection
HO
V
DD
HIN
SD
LIN
V
SS
V
CC
V
DD
HIN
SD
LIN
V
SS
V
CC
COM
LO
V
B
V
S
up to
6
500V
TO
LOAD
2
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IR2113L6
Static Electrical Characteristics
VBIAS (VCC, VBS, VDD) = 15V, TA = 25°C and VSS = COM unless otherwise specified. The VIN, VTH and
IIN parameters are referenced to VSS and are applicable to all three logic input leads: HIN, LIN and SD. The
VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
Tj = 25°C
Symbol
V
IH
V
IL
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
QDD
I
IN+
I
IN-
Parameter
Logic “1” Input Voltage
Logic “0” Input Voltage
High Level Output Voltage, V
BIAS
- V
O
Low Level Output Voltage, VO
Offset Supply Leakage Current
Quiescent V
BS
Supply Current
Quiescent V
CC
Supply Current
Quiescent V
DD
Supply Current
Logic “1” Input Bias Current
Logic “0” Input Bias Current
Min
9.5
—
—
—
—
—
—
—
—
—
7.5
7.0
7.4
7.0
2.0
2.0
Tj = -55 to
125°C
Test Conditions
V
DD
= 15V
V
DD
= 15V
V
V
IN
= V
IH
, I
O
= 0A
V
IN
= V
IH
, I
O
= 0A
V
B
= V
S
= 600V
V
IN
= 0V or VDD
—
6.0
1.2
0.1
50
230
340
30
40
1.0
9.7
9.4
9.6
9.4
—
—
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.7
1.5
0.1
250
500
600
60
70
10
—
—
V
8.5
8.2
—
—
—
—
—
A
—
V
O
= 0V, V
IN
= VDD
PW < = 10
µs
V
O
= 15V, V
IN
= 0V
PW < = 10
µs
Typ. Max. Min. Max Units
—
—
0.7
—
—
125
180
5.0
15
—
8.6
8.2
µA
V
IN
= 0V or VDD
V
IN
= 0 or VDD
V
IN
= VDD
V
IN
= 0V
V
BSUV+
V
BS
Supply Undervoltage Positive
Going Threshold
V
BSUV-
V
BS
Supply Undervoltage Negative
Going Threshold
V
CCUV+
V
CC
Supply Undervoltage Positive
Going Threshold
V
CCUV-
V
CC
Supply Undervoltage Negative
Going Threshold
I
O+
Output High Short Circuit Pulsed
Current
I
O-
Output Low Short Circuit Pulsed
Current
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IR2113L6
6
Figure 1. Input/Output Timing Diagram
Figure 2. Floating Supply Voltage Transient Test
Circuit
(0 to6
600V)
HIN
LIN
ton
50%
50%
tr
90%
toff
90%
tf
HO
LO
Figure 3. Switching Time Test Circuit
10%
10%
Figure 4. Switching Time Waveform Definition
HIN
LIN
50%
50%
SD
50%
LO
HO
10%
tsd
MT
MT
90%
HO
LO
90%
LO
Figure 3. Shutdown Waveform Definitions
HO
Figure 6. Delay Matching Waveform Definitions
4
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IR2113L6
250
250
200
Turn-On Delay Time (ns)
200
Max.
150
Max.
Turn-On Delay Time (ns)
150
Typ.
100
Typ.
100
50
50
0
-50
-25
0
25
50
75
100
125
Temperature (°C)
0
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
Figure 7A. Turn-On Time vs. Temperature
Figure 7B. Turn-On Time vs. Voltage
250
250
200
Turn-Off Delay Time (ns)
Turn-Off Delay Time (ns)
200
Max.
150
150
Typ.
Max.
100
Typ.
100
50
50
0
-50
-25
0
25
50
75
100
125
Temperature (°C)
0
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
Figure 8A. Turn-Off Time vs. Temperature
Figure 8B. Turn-Off Time vs. Voltage
250
250
200
Shutdown Delay Time (ns)
Shutdown Delay time (ns)
200
Max.
150
Max.
150
Typ.
100
Typ.
100
50
50
0
-50
-25
0
25
50
75
100
125
Temperature (°C)
0
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
Figure 9A. Shutdown Time vs. Temperature
Figure 9B. Shutdown Time vs. Voltage
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