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IR2130D_15

Description
3-PHASE DRIVER
File Size326KB,22 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet View All

IR2130D_15 Overview

3-PHASE DRIVER

PD-60022D
IR2130D
Features
n
Hermetic
n
Floating channel designed for bootstrap operation
3-PHASE DRIVER
Product Summary
V
OFFSET
I
O
+/-
V
OUT
t
on/off
(typ.)
Deadtime (typ.)
400V max.
100mA / 100mA
10 - 20V
675ns & 425ns
0.9µs
n
n
n
n
n
n
Fully operational to +400V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for all channels
Over-current shutdown turns off all six drivers
Independent half-bridge drivers
Matched propagation delay for both channels
Outputs in phase with inputs
Description
The IR2130D is a high voltage, high speed power MOSFET
and IGBT driver with three independent high and low side
referenced output channels. Proprietary HVIC technology
enables ruggedized monolithic construction. Logic inputs
are compatible with 5V CMOS or LSTTL outputs. A ground-
referenced operational amplifier provides analog feedback
of bridge current via an external current sense resistor. A
current trip function which terminates all six outputs is also
derived from this resistor.
An open drain
FAULT
signal indicates if an over-
current or undervoltage shutdown has occurred.
The output driverhgre a high pulse current
buffer stage designed for minimum driver cross-con
duction. Propagation delays are matched to simplify
use at high frequencies. The floating channels can
be used to drive N-channel power MOSFETs or
IGBTs in the high side configuration which operate
up to 400 volts.
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to Vso. The Thermal Resistance and Power Dissipation ratings are
measured under board mounted and still air conditions.
Symbol
V
B1,2,3
V
S1,2,3
V
HO1,2,3
V
CC
V
SO
V
LO1,2,3
V
IN
V
FLT
V
CAO
V
CA-
dV S/dt
P
D
R
thJA
T
j
T
S
T
L
Parameter
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Output Voltage
Low Side Fixed Supply Voltage
Low Side Driver Return
Low Side Output Voltage
Logic Input Voltage (HIN, LIN & SD)
Fault Output Voltage
Operational Amplifier Output Voltage
Operational amplifier Inverting Input Voltage
Allowable Offset Supply Voltage Transient (Fig. 16)
Package Power Dissipation @ TA< = 25°C (Fig. 19)
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperatue
Lead Temperature (Soldering, 10 seconds)
Weight
Min.
Max.
Units
-0.3
V
S1,2,3
+ 20
V
SO
- 5
V
SO
+ 400
V
S1,2,3
- 0.3 V
S1,2,3
+ 0.3
-0.3
20
-5
V
CC
+ 0.3
V
SO
- 0.3
V
CC
+ 0.3
-0.3
V
CC
+ 0.3
-0.3
V
CC
+ 0.3
-0.3
V
CC
+ 0.3
-0.3
V
CC
+ 0.3
50
1.5
70
-55
125
-55
150
300
6.1 (typical)
V
V/nS
W
°C/W
°C
g
www.irf.com
1
05/02/11

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