IRF352 datasheet, PDF - EEWORLD Datasheet

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IRF352: Description14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA; Categorysemiconductor Discrete semiconductor; File Size100KB，3 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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IRF352 Overview

14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

IRF352 Parametric

Parameter Name	Attribute value
Number of terminals	2
Minimum breakdown voltage	400 V
Processing package description	HERMETIC SEALED, METAL, TO-3, 2 PIN
state	ACTIVE
packaging shape	ROUND
Package Size	FLANGE MOUNT
Terminal form	PIN/PEG
terminal coating	NOT SPECIFIED
Terminal location	BOTTOM
Packaging Materials	METAL
structure	SINGLE
Shell connection	DRAIN
Number of components	1
Transistor component materials	SILICON
Channel type	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER
Maximum leakage current	14 A
Rated avalanche energy	11.3 mJ
Maximum drain on-resistance	0.4000 ohm
Maximum leakage current pulse	56 A

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Lf nc.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

TELEPHONE: (973) 376-2922

(212) 227-6005

FAX: (973) 376-8960

IRF350/351/352/353

FEATURES

Low RoS(on)

N-CHANNEL

POWER MOSFETS

Improved Inductive ruggedness

Fast switching times

Rugged polyslllcon gate cell structure

Low Input capacitance

Extended safe operating area

Improved high temperature reliability

TO-3 package (Standard)

TO-3

PRODUCT SUMMARY

Part Number

IRF260

IRF251

IRF252

IRF253

VDS

400V

360V

400V

360V

Ros(on)

0.30

0.40

15A

13A

MAXIMUM RATINGS

•

Characteristic

Symbol

Voss

VOGR

IRF350

400

IRF351

350

IRF352

400

±20

IRF353

360

350

Unit

Drain-Source Voltage (1)

Drain-Gate Voltage (Rcs= 1 .OM 0) (1 )

Gate-Source Voltage

Continuous Drain Current T

=25°C

Continuous Drain Current T

-100'C

Drain Current— Pulsed (3)

Gate Current— Pulsed

Total Power Dissipation @ T

=25°C

Derate above 25° C

Operating and Storage

Junction Temperature Range

Maximum Lead Temp, for Soldering

Purposes. 1/8" from case for 5 seconds

Vdc

Adc

Watts

W/°C

VGS

IDM

low

Tj, Tstg

9.0

8.0

±1.8

8.0

150

1.2

-65 to 150

300

«c

•c

Notes:

(1) Tj=25°Cto 150°C

(2) Pulse test: Pulse width<300^s, Duty Cycle<2%

(3) Repetitive rating: Pulse width limited by max. junction temperature

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

IRF352 Related Products

	IRF352	IRF350	IRF351	IRF353
Description	14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA	14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA	14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA	14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
Maker	-	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor
Reach Compliance Code	-	unknow	unknown	unknow

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