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IRF6621PBF_15

Description
Ideal for CPU Core DC-DC Converters
File Size272KB,11 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Compare View All

IRF6621PBF_15 Overview

Ideal for CPU Core DC-DC Converters

IRF6621PbF
IRF6621TRPbF
DirectFET™ Power MOSFET
‚
Typical values (unless otherwise specified)
PD - 97093
RoHS Compliant

l
Lead-Free (Qualified up to 260°C Reflow)
l
Application Specific MOSFETs
l
Ideal for CPU Core DC-DC Converters
l
Low Conduction Losses and Switching Losses
l
Low Profile (<0.7mm)
l
Dual Sided Cooling Compatible

l
Compatible with existing Surface Mount Techniques

l
V
DSS
Q
g
tot
V
GS
Q
gd
4.2nC
R
DS(on)
Q
gs2
1.0nC
R
DS(on)
Q
oss
6.9nC
30V max ±20V max 7.0mΩ@ 10V 9.3mΩ@ 4.5V
Q
rr
10nC
V
gs(th)
1.8V
11.7nC
SQ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

SQ
SX
ST
MQ
MX
MT
MP
DirectFET™ ISOMETRIC
Description
The IRF6621PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6621PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6621PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
25
Typical R DS (on) (mΩ)
Max.
30
±20
12
9.6
55
96
13
9.6
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
Continuous Drain Current, V
GS
Pulsed Drain Current
Avalanche Current
Continuous Drain Current, V
GS
@ 10V
g
e
@ 10V
e
@ 10V
f
h
12
10
8
6
4
2
0
0
4
8
ID= 9.6A
A
Single Pulse Avalanche Energy
Ãg
mJ
A
ID = 12A
20
15
TJ = 125°C
10
TJ = 25°C
5
2.0
4.0
6.0
8.0
VGS, Gate-to-Source Voltage (V)
10.0
VDS = 24V
VDS= 15V
12
16
20
24
28
Notes:

Click on this section to link to the appropriate technical paper.
‚
Click on this section to link to the DirectFET Website.
ƒ
Surface mounted on 1 in. square Cu board, steady state.
Fig 1.
Typical On-Resistance Vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
„
T
C
measured with thermocouple mounted to top (Drain) of part.
…
Repetitive rating; pulse width limited by max. junction temperature.
†
Starting T
J
= 25°C, L = 0.29mH, R
G
= 25Ω, I
AS
= 9.6A.
www.irf.com
1
5/24/06

IRF6621PBF_15 Related Products

IRF6621PBF_15 IRF6621PbF IRF6621TR1PBF IRF6621TRPbF
Description Ideal for CPU Core DC-DC Converters DirectFETPower MOSFET  DirectFETPower MOSFET  DirectFETPower MOSFET 
Is it lead-free? - Lead free Lead free Lead free
Is it Rohs certified? - conform to conform to conform to
Maker - International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction - ROHS COMPLIANT, ISOMETRIC-3 ROHS COMPLIANT, ISOMETRIC-3 ROHS COMPLIANT, ISOMETRIC-2
Contacts - 3 3 2
Reach Compliance Code - unknown unknown unknown
ECCN code - EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) - 13 mJ 13 mJ 13 mJ
Shell connection - DRAIN DRAIN DRAIN
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 30 V 30 V 30 V
Maximum drain current (ID) - 12 A 12 A 12 A
Maximum drain-source on-resistance - 0.0091 Ω 0.0091 Ω 0.0091 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code - R-XBCC-N3 R-XBCC-N3 R-XBCC-N2
JESD-609 code - e4 e4 e4
Humidity sensitivity level - 3 3 3
Number of components - 1 1 1
Number of terminals - 3 3 2
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature - 150 °C 150 °C 150 °C
Package body material - UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - CHIP CARRIER CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Celsius) - 260 260 260
Polarity/channel type - N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) - 96 A 96 A 96 A
Certification status - Not Qualified Not Qualified Not Qualified
surface mount - YES YES YES
Terminal surface - Silver/Nickel (Ag/Ni) Silver/Nickel (Ag/Ni) Silver/Nickel (Ag/Ni)
Terminal form - NO LEAD NO LEAD NO LEAD
Terminal location - BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature - 30 30 30
transistor applications - SWITCHING SWITCHING SWITCHING
Transistor component materials - SILICON SILICON SILICON
Base Number Matches - 1 1 1
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