, O
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Triacs
Silicon Bidirectional Triode Thyristors
,.. designed primarily for industrial and consumer applications for full-wave con-
trol of ac loads such as appliance controls, power supplies, solid-state relays, heat-
Ing controls, motor controls, welding equipment, and power switching systems.
Electrically Isolated From Mounting Base
Isolation Voltage of 2500 Volts RMS
Quick Connect/Disconnect Terminals
Glass Passivated and Center Gate Geometry
Gate Triggering Guaranteed in Four Modes
MAC20A
MAC25A
MAC50A
TRIACs
15, 25 and 40
AMPERES RMS
200 thru 800 VOLTS
CASE 326-01
MAXIMUM RATINGS
|Tj - -40 to +12B°C unless otherwise noted.)
Rating
Repetitive Peak Off-State Voltage
1/2 Sine Wave 60 to 60 Hz, Gate Open
MAC20A/25A/60A4
MAC20A/25A/60A6
MAC20A/25A/50A8
MAC20A/25A/50A10
RMS On-State Current
(Tc - 100°C for MAC20A)
Oc = 90°C for MAC25A)
fT
c
= 70°C for MACBOA)
Peek Non-Repatltlve Surge Current
(One Full Cycle, 60 Hz)
Circuit Fusing
(t = 1 to 8.3 ms)
Average Gate Power
Peak Gate Current (10
its)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
MAC series
20A
26A
BOA
Unit
Volts
VDRM
200
400
600
800
ITIRMSI
Amps
15
25
40
'TSM
|2t
150
90
0.5
2
260
260
0.5
2
300
375
Amps
A2s
PQ(AV)
0.75
4
Watt
Amps
"C
*C
>GM
Tj
T
stg
0 to + 126
-40 to +125
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
MAC20A • MAC25A • MAC50A
THERMAL
CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (DC)
(Apparent) Note
1
Nets 1, Defined as: 1125'C - TQ) for a 60 H* full sine wave.
Symbol
Maximum Value
1.6
1.3
1.5
1
1.4
0.95
Unit
"we
•cm
PAV
ELECTRICAL CHARACTERISTICS
(All voltage polarity reference to MT1; applies to either polarity of MT2 to MT1;
Characteristic
Peak Forward or Reverse Blocking Current
(Rated VpRM °
r V
RRM-
8***
open) TC = 25°C
T
C
- 125'C
Peak On-State Voltage
(Pulse Width - 1 ms. Duty Cycle 2%)
(ITM - 21 A Peak)
(ITM = 35 A Peak)
(I
TM
- 66 A Peak)
Gate Trigger Current (Continuous dc)
(Vo - 12 Vdc, RL - 50 Ohms)
MT2( + ), G< + ); MT2(-|, G(-); MT2{ + ), G(-)
MT2(-|, G< + )
Gate Trigger Voltage (Continuous dc)
<VD = 12 Vdc, HL = 60 Ohms)
MT2( + ). G< + ); MT2(-l, G(-); MT2( + ), G(-)
MT2(-). G< + )
Symbol
25*C unless otherwise noted.)
MAC20A
MAC25A
MACSOA
Mln
Typ
Max Mln
Typ
Max Mln
—
TYP
—
Max
Unit
*»A
mA
IDRM-
'RRM
—
10
2
—
—
10
2
_
10
2
V
TM
MAC20A
MAC25A
MAC20A
_
1.3
1.6
—
1.4
1.7
—
1.65 1.76
Volts
"GT
—
mA
15
30
50
75
—
20
35
70
—
100
20 70
35 100
V
GT
0.9 2
1.4 2.5
0.2
0.2
6
40
—
10
76
Volts
1.1 2
1.3 2.6
0.2
—
10
75
1.1 2
1,3 2.6
mA
MS
(VD = Rated VDRM- RL ~
10
***,
TC = i25
c
o
Holding Current
(Vo - 12 Vdc, Gate Open, RL - 40 Ohms)
Turn-On Time
(Vo = Rated VDRM)
(ITM - 21 A, IQ - 120 mA)
«TM - 35 A, IQ - 200 mA)
(ITM = 58 A, IQ - 200 mA)
Critical Rate-of-Rise of Commutation Voltage
(Vo « Rated VDRM- <TM = *1 A,
Commuteting di/dt - 8 A/ms, TC - 100°C)
(V
D
- Rated V
DRM
, I
TM
- 35 A,
Commutating di/dt = 16 A/ms, T
c
= 90°C)
(V
D
- Rated V
0
RM- <TM - 66 A,
Commuteting dl/dt - 22 A/ms, TC = 70°C)
IH
«9t
—
MAC20A
MAC2BA
MAC50A
dWdt(c)
MAC20A
MAC25A
MAC50A
dv/dt
1.5
—
—
—
1.5
—
—
1.6
—
V//is
E
30
—
5
30
—
5
—
100
—
30
76
—
—
Critical Rate-of-Rise of Off-State Voltage (Exponential Rise)
(V
D
= Bated V
DRM
. Gate Open, T
c
= 125°C)
—
100 ~~
—
V/MS
Microchip MCU
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