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MAC224A10

Description
Triacs Silicon Bidirectional 40 Amperes RMS Triode Thyristors
CategoryAnalog mixed-signal IC    Trigger device   
File Size122KB,4 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
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MAC224A10 Overview

Triacs Silicon Bidirectional 40 Amperes RMS Triode Thyristors

MAC224A10 Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
Reach Compliance Codeunknow
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Trigger device typeTRIAC
, U
na..
LS
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
MAC224
Triacs
Silicon Bidirectional 40 Amperes RMS
Triode Thyristors
. . . designed primarily for full-wave ac control applications such as lighting systems,
heater controls, motor controls and power supplies.
Blocking Voltage to 800 Volts
All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability
Gate Triggering Guaranteed in Three Modes (MAC224 Series) or Four Modes
(MAC224A Series)
MAC224A
TRIACs
40 AMPERES RMS
200 thru 800 VOLTS
(TO-220AB)
MAXIMUM RATINGS
(Tj = 25°C unless otherwise noted.)
Rating
Peak Repetitive Off-State VoltageO)
(Tj = -40to125°C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC224-4, MAC224A4
MAC224-6, MAC224A6
MAC224-8, MAC224A8
MAC224-10, MAC224A10
On-State RMS Current (TC = 75°C)(
2
)
(Full Cycle Sine Wave 50 to 60 Hz)
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, Tj = 125°C)
Circuit Fusing (t = 8.3 ms)
Peak Gate Current (t =£ 2 us)
Peak Gate Voltage (t « 2 us)
Peak Gate Power (t <s 2 us)
Average Gate Power (TQ = 75°C, t s 8.3 ms)
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque
|2t
Symbol
Value
Unit
Volts
VDRM
200
400
600
800
'T(RMS)
40
350
500
±2
Amps
Amps
'GM
V
GM
PGM
PG(AV)
Amps
Volts
Watts
Watts
±10
20
0.5
TJ
T
stg
-40 to 150
8
in.lb.
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source
(cont.)
such that the voltage ratings of the devices are exceeded.
2. This device is rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when the device
is to be used at high sustained currents. (See Figure 1 for maximum case temperatures.)
Qualify Semi-Conductors

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Description Triacs Silicon Bidirectional 40 Amperes RMS Triode Thyristors Triacs Silicon Bidirectional 40 Amperes RMS Triode Thyristors Triacs Silicon Bidirectional 40 Amperes RMS Triode Thyristors Triacs Silicon Bidirectional 40 Amperes RMS Triode Thyristors Triacs Silicon Bidirectional 40 Amperes RMS Triode Thyristors Triacs Silicon Bidirectional 40 Amperes RMS Triode Thyristors Triacs Silicon Bidirectional 40 Amperes RMS Triode Thyristors Triacs Silicon Bidirectional 40 Amperes RMS Triode Thyristors Triacs Silicon Bidirectional 40 Amperes RMS Triode Thyristors
Maker New Jersey Semiconductor - New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor -
Reach Compliance Code unknow - unknow unknow unknow unknown unknow unknow unknow
Trigger device type TRIAC - TRIAC TRIAC TRIAC TRIAC TRIAC TRIAC TRIAC
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