MFE209 datasheet, PDF - EEWORLD Datasheet

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MFE209: DescriptionN-CHANNEL DUAL-GATE; File Size87KB，2 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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MFE209 Overview

N-CHANNEL DUAL-GATE

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O

ne.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

TELEPHONE: (201) 376-2922

(212)227-6005

FAX: (201) 376-8960

MFE209

N-CHANNEL DUAL-GATE

SILICON-NITRIDE PASSIVATED

MOS FIELD-EFFECT TRANSISTOR

MAXIMUM RATINGS

Rating

Drain-Source Voltage

Drain. Gate Voltage

Gate Current

Symbol

Value

20

Unit

VDSX

VDGI

VDG2

Vdc

mAdc

30

-10

10

TO-72

IGIR

IGIF

IQ2R

'G2F

Drain Current — Continuoui

Total Power Dissipation fe T

A

= 26'C

Derate above 25°C

Storage Channel Temperature Range

Operating Channel Temperature

Lead Temperature, 1/16* From Seated

Surface for 10 Seconds

ID

PD

T

SIB

T

channel

30

300

1.71

mAdc

mW

mW-'C

- 6 5 t o +200

°C

200

260

°c

"C

TL

ELECTRICAL CHARACTERISTICS

<T

A

= 2S'C unlns otherwise noted.)

Characterise

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

(Id = 10 /iAdc, VGIS - ~

4

-° Vdc, VQ2S =

4

-0 Vdc)

Gate 1 — Source Breakdown Voltage

IIQ1 - 10 mAdc, VQ2S - VDS = °>

Gate 1 — Source Reverse Breakdown Voltage

V(BR)DSX

Symbol

Mfn

20

7,0

-7.0

7.0

-7.0

01

•0.1

Typ

—

-

Vdc

VIBRIGISSF

VIBRIGISSR

V(BRIG2SSF

V(BR)G2SSR

VGIS(off)

VG2S(oH)

'G1SSF

'G1SSR

I-

n

—

22

i: MilMK AND NOTES ASSOCMEO WITH TOH

^

J

HGI - -10 mAdc, VQ2S • VDS • o)

Gate 2

-~

Source Forward Breakdown Voltage

(|Q2 f' 10 mAdc, VQIS "

V

DS - 0)

Gate 2 — Source Reverie Breakdown Voltage

(|Q2 - -10 mAdc, VQIS - VDS • 0)

Gate 1 — Source Cutoff Voltage

(VDS • "> Vdc, VQ2S * *-° Vdc, ID " 50 nAdc)

Gate 2 — Source Cutoff Voltage

(v

D

s • 15 vdc, VQIS • o, i

0

"Yo '

n

_

—

i

10

20

- so ^Adc)

01

vdc

nAdc

Gate 1 — Terminal Forward Current

(VQJS .. 6.0 vdc, v

G

2s - VDS =•

Gate 1 — Terminal Reverse Current

--

(VGIS - '-16.0 vdc, VQ2S

f

VDS • o)

(VGIS - -fl.o-vdc, yeas • VDS - o, TA - iwo

- 01

-

—

-

—

-20

-10

20

nAdc

MAdc

nAdc

AtJBK

Gate 2 — Terminal Forward Current

(v

G

2S'- 6.0 vdc, VGIS - VDS

Gate 2 — Terminal Reverse Current

'G2SSF

IQ2SSR

(VQ2S •« -6.0 vdc, VGIS - VDS - 01

(

v

G2S

= -6.0 Vdc, VGIS • VDS * o. T

A

» iso-ci

ON CHARACTERISTICS

Gate 1 — Zero Voltage Drain Current

(VDS • IS Vdc, V(j

is

- 0, VQ2S • *-0 Voo)

SMALL-SIGNAL CHARACTERISTICS

Forward Transfer Admit'

iiru.r

4o

WDS

1& Vdc, V^2S

Input Capacitance

(Vos « i & V * - '^

lk

j..

Reverse Transfer Cao<*C'

IV

DS

-5 vdc v,,^,

Output Capacirance

(VDS = 15 Vdc, V

G 2

s

-

5.0

-

—

,3

«S

••20

-10

nAdc

MAdc

mAdc

IDSS

iVfs

30

vdc, ID

,0

—

10 mAdc. f -

10

kHz)

•iOmArtc

>

5 0 mAdc f

5.0 mAdc. f

JO Vrtr. ID

1.0

MHz)

1.0

MHz)

1,0MHz)

r c,

sb

c,

ss

C

OS

s

NF

Gps

BW

>

0 03

0

t

0

1

7

H

j u vdc. ID -

4 o vdc. ID

~

0,005

05

—

10

7.0

0023

20

45

13

—

I

i

pF

Common-Source Noise igure (FtQufe 1 1

(VDS = isvdc, v

G2S

' 4 o vdc. ID • =

10 mAdc, f -

500

MHz)

Common-Source Power Ga«> (Figure 11)

10 mAdc, f * 500MHz)

(VDS = iavdc, v

G2S

Bandwidth

dB

MHz

(VDS - ^ vdc, VQ2s

4 0

Vdc,

ID

'

10 mAdc. f = 500MHz)

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