^Se-mi-dondudtoi Lpioaucki, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Medium-Power Complementary
Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applica-
tions.
•
•
High DC Current Gain — hpE = 4000 (Typ) @ IQ = 5.0 Adc
Monolithic Construction with Built-in Base-Emitter Shunt Resistors
PNP
MJ2500
MJ2501*
NPN
MJ3000
MJ3001*
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
9JC
Symbol
V
CEO
MJ2500
MJ3000
60
60
5.0
10
0.2
MJ2501
MJ3001
80
80
Unit
Vdc
Vdc
Vdc
Adc
Adc
VCB
VEB
"c
IB
PD
T
J.
10 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60-80 VOLTS
150 WATTS
150
0.857
-55 to
+ 200
Watts
W/°C
°C
T
s
tg
Max
1.17
Unit
°c/w
(TO-3)
PNP
MJ2500
1
1
COLLECTOR
9
- n
I
I
NPN
MJ3000
MJ3001
COLL ECTOR
C)
|-
I
I
!
****
. -
|
= 2.0 k
=50
j "-^VW-A-^VW-H
C
~~^
i
-> i
EM
TTER
K-"
j
H
j
i-C ;; ii
I
» 2.0k
= 50
I
i
I
L-AVW.,^/VV-i
-
1
i
j
l_
<
>
EMU
FTER
t
^•^
r
J
*~ ~l
,
l
•^ I
I
I
Figure 1. Darlington Circuit Schematic
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors entourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
MJ2500 MJ2501 MJ3OOO MJ3OO1
ELECTRICAL CHARACTERISTICS
(Tc = 25°C unless otherwise noted)
|
OFF CHARACTERISTICS
Collector Emitter Breakdown VoltageO )
(IC = 100 mAdc, IB = O)
Collector-Emitter Leakage Current
(VEB = 60 Vdc, RBE = 1 .0 k ohm)
(VEB = 80 Vdc, RBE = 1 .0 k ohm)
(VEB =
60 Vdc
.
R
BE = 1 .0 k ohm, TC = 1 50°C)
(VEB = 80 Vdc,
R
BE = 1.0k ohm, TC = 150°C)
Emitter Cutoff Current (VBE = 5.0 Vdc, lc = 0)
Collector Emitter Leakage Current (VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
ON CHARACTERISTICS(I)
DC Current Gain (Ic = 5.0 Adc, VCE =
3
-°
vdc
)
Collector-Emitter Saturation Voltage (lc = 5.0 Adc, IB = 20 mAdc)
(l
c
= 10 Adc, IB = 50 mAdc)
Base Emitter Voltage (l
c
= 5,0 Adc, VCE = 3.0 Vdc)
(
1
)PulseTest: Pulse Width < 300 (is, Duty Cycle < 2.0%.
MJ2500, MJ3000
MJ2501,MJ3001
MJ2500, MJ3000
MJ2501, MJ3001
MJ2500, MJ3000
M J2501 , MJ3001
MJ2500, MJ3000
MJ2501, MJ3001
V
(BR)CEO
Characteristic
I
Symbol
I|
Min
| Max
|
Unit
|
60
80
Vdc
—
'CER
mAdc
—
IEBO
ICEO
1.0
1.0
5.0
5.0
2.0
1.0
1.0
—
2.0
4.0
3.0
mAdc
mAdc
_
—
HFE
v
CE(sat)
1000
—
—
—
Vdc
Vdc
v
BE(on)
A
«•
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M. 1982
2.
CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY
INCHES
MIN
MAX
1.55C REF
1.050
0.250
0.335
0.043
0.038
0.070
0.055
0.430 BSC
0.215 BSC
0.440
0,480
0.665 BSC
—
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
26.67
—
8.51
6.35
0.97
1.09
1.77
1.40
10.92 BSC
5.46 BSC
12.19
11.18
16.89 BSC
21.08
3.84
4.19
30. 15 BSC
4.77
3.33
00.13 (0.005)® | T|~Q ®| Y @
DIM
A
B
C
D
F
G
H
K
L
N
Q
U
V
STYLE 1:
PINT BASE
2. EMITTER
CASE: COLLECTOR
FPGA/CPLD
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