JbEtnL-Conauctoi ^Pioaucti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
COMPLEMENTARY SILICON PLASTIC
POWER TRANSISTORS
... designed
for
use as output device in complementary audio
amplifiers up to 30-Watts music power per channel
FEATURES:
•Collector-Emitter Sustaining Vortage-
* DC Current Gain-
hFE = 25-100 O I
NPN
PNP
MJE2801T MJE2901T
3.0 A
10 AMPERE
COMPLEMENTARY SILICON
POWER TRANASISTORS
60 VOLTS
75 WATTS
MAXIMUM RATINGS
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
-Peak
Base current
Total Power Dissipation ©T
c
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCK>
VCBO
VEBO
Ic
'CM
Rating
60
60
4.0
Unit
V
V
V
TO-220
10
15
5,0
A
>e
PD
' J '"^STO
A
75
0.6
-65 to +150
W
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance Junction to Case
Symbol
R9jc
Max
Unit
°C/W
PM 1.BASE
2.COU.ECTOR
4 COLLECTOR(CASE)
1.67
MILLIMETERS
FIGURE -1 POWER DERATING
100
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
O
MIN
MAX
40
20
14.66
9.78
5.01
13.06
3.57
2.42
1.12
0.72
4.22
1.14
220
25
50
75
100
125
150
0.33
2.48
3.70
15.31
10.42
6.52
14.62
4.07
3.66
1.36
0.96
4.98
1.38
2.97
0.55
296
390
T
c
, TEMPERATUREfC)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors entourages customers to verify that datasheets ore current before placing orders.
OnnlJfv
MJE2801T NPN / MJE2901T PNP
ELECTRICAL CHARACTERISTICS ( T
c
= 25°C unless otherwise noted )
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
{ l
c
= 200 mA, I
B
= 0 )
Collector Cutoff Current
(V
CB
=60V,I
E
=0)
(V
CB
=60V,I
E
=0,T
C
=150°C)
Emitter Cutoff Current
(V
ra
=4.0V,l
c
=0)
ON CHARACTERISTICS (1)
DC Current Gain
(I
C
=3.0A,V
CE
=2.0V)
Base-Emitter On Voltage
(I
C
=3.0A,V
C6
=2.0 V)
(1) Pulse Test Pulse Width =300 us, Duty Cycle S 2.0%
MJE2B01T
FIG-2 "ON" VOLTAGE
MJE2S01T
Symbol
Min
Max
Unit
VCEO
ICBO
V
60
mA
0.1
2.0
mA
1.0
IEBO
hFE
V
BE(ell)
25
100
V
1.4
/
,-
1.2
1.0
Mt
zo
T
fB°C
1.8
E?
I
f
Tj"2S°C
« ='
10
d
^
xfl ^
y
^
y
1
'/
7
^
•^
VM
!O*
, i ^
^
Z^L
i 0.6
I
V
•v.
e»'«
«
^<
s
Vo
!f— .)<
II
^^
X
/
I
U
/'
t
/
::
10
I-
0
-^=-
=
=
N
N=
tt
H
„«
o"i,•10
I I
1
.-
,
X
^
'
7
^
[/
/I
BE
Vet!-3 i(
3°'*
>
0.2
II
|
.•10
=«
1—t—M-
°T
r^
1
o
_—-
""
^
—
I
ai
0.2
as
2
5
HH
H-
ft
f— -'
1C , COLLECTOR CURRENT (AMP)
H*
•><
»lc<
^- ^
C , COLLECTOR CURRENT (AMP)
FIG-3 DC CURRENT GAIN
500
FIG-4 ACTIVE-REGION SAFE OPERATING AREA
10
^
—
"X
^
i
^—
•\
^_
"*x
t
N
—1
s
s
X
*
1
V
s
\
V
\0
—
1.—
ui-
- Ben*
ngVAi
-•III
rtt
ndtin
Mkd5W
U«rtt
Thenr•lylinitw
IT
•71<>
\1 0.02
0.1
0.05
0.1
D_2
0.5
1
2
1
2
S
10
20
40 60
Ic , COLLECTOR CURRENT (AMP)
There are two limitation on the power handling ability of a
transistor :avwage junction temperature and second breakdown safe
operating area curv« indicat* I
C
-V
CE
Hmit* of the transistor that must be
obaarad for reliable operation
i.e., the transistor
mu»t
not be
subjacted to greater dissipation than curves indicate.
V
cc
, COLLECTOR EMITTER VOLTAGE (VOLTS)
The data of FIG-4
ia base on Tjp,q-1SO °C;T
C
» variable
depending on conditions.second breakdown pulse limits are valid for
duty cycles to 10% provided Tj^lStFC At high case temperatures,
thermal limitation will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.
Embedded System
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