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MMBT4401LT1

Description
600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
Categorysemiconductor    Discrete semiconductor   
ManufacturerWINNERJOIN
Websitehttp://www.wej.cn/
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MMBT4401LT1 Overview

600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

MMBT4401LT1 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum on-time35 ns
Maximum off time255 ns
Maximum collector current0.6000 A
Maximum Collector-Emitter Voltage40 V
Processing package descriptionCASE 318-08, 3 PIN
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Maximum ambient power consumption0.2190 W
Transistor typeUniversal small signal
Minimum DC amplification factor40
Rated crossover frequency250 MHz

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