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MPD100

Description
SILICON, STABISTOR DIODE, DO-204AA
CategoryDiscrete semiconductor    diode   
File Size113KB,3 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric Compare View All

MPD100 Overview

SILICON, STABISTOR DIODE, DO-204AA

MPD100 Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
Reach Compliance Codeunknow
Is SamacsysN
Base Number Matches1
^e-fni-^onductoi ^Product*, fine.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
IN4156, IN4157, IN4453,
IN4829, IN483O, IN5179
STABISTORS
Also,
T\gt\t
Tolerance
MPD100 thru MPD400A
or
MZ2360 and MZ2361
PACKAGE
DIMENSIONS
APPLICATION
These
axial
lead diodes represent configurations of one to four* p-n junctions
in series which may be used in any application requiring light tolerance, low
voltage levels versus current. This method of low voltage regulation is com-
paritively superior in dynamic impedence (voltage change versus current) than
low voltage zeners where tunneling instead of avalanche current is dominant.
Typical applications include use as signal limiters, level shifters in transistor
logic, meter protectors, and low voltage regulators. For computer circuit ap-
plications, a controlled stored charge selection is provided as well.
In addition, these devices may be used for temperature compensation wherein
each p-n junction contributes approximately -2 mV/°C each.
•Consult factory for more than four p-n junction configurations.
.010 MAX. I
2.03 OIA.
POLARITY
MARK
(CAtHOOEl
iffi ,
DESCRIPTION/FEATURES
H
B
H
0
E3
Hermetically Sealed Glass Packages (DO-35)
High Reverse Breakdown and Low Leakage
Excellent Low Voltage Regulation
Controlled Stored Charge
Planar Passivated Die Elements
.W&J&.
rj
IA
.W-0,559 ""
All dimensions in '"--
ni.ni.
DO-35
MECHANICAL
CHARACTERISTICS
MAXIMUM RATINGS
500 mW dc Power Rating**
Power Derating 4.0 mW/°C above 50 °C
Junction and Storage Temperatures: -65"C to +175°C
"Consult factory for ratings up to I.5W.
*Cnse: Hermetically sealed glass DO-35.
DO-7 and DO-41 glass are
optional. Single p-n junction
devices also offered in DO-41
plastic.
Finish: All external surfaces are
corrosion resistant and leads
solderable.
Thermal Resistance: 200° C/W typical
for DO-3S at 0.375
inches from body.
Mounting Position: Any.
Polarity: Cathode marked with band. To be
operated with cathode negative for
normal low voltage operation
• Designate case
sin
when ordering.
NJ Semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going to press However NJ
Semi-CoinJuctor$ assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages
rs til v.-rit'v tli-
are
rnrivnl hpt'i-irf ntarino nnleni

MPD100 Related Products

MPD100 IN4156 MPD200A MPD300A MZ2361 MPD1OOA MPD1OO IN4830
Description SILICON, STABISTOR DIODE, DO-204AA SILICON, STABISTOR DIODE, DO-204AA SILICON, STABISTOR DIODE, DO-204AA SILICON, STABISTOR DIODE, DO-204AA SILICON, STABISTOR DIODE, DO-204AA SILICON, STABISTOR DIODE, DO-204AA SILICON, STABISTOR DIODE, DO-204AA SILICON, STABISTOR DIODE, DO-204AA

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