MPQ7093
SILICON
HIGH VOLTAGE
QUAD PNP TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPQ7093 is
comprised of four independent PNP silicon transistors
mounted in a 14-pin DIP, designed for high voltage
amplifier applications.
MARKING: FULL PART NUMBER
TO-116 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (per transistor)
Power Dissipation (total package)
Power Dissipation (TC=25°C) (total package)
Operating and Storage Junction Temperature
ELECTRICAL
SYMBOL
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
Cib
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
PD
TJ, Tstg
UNITS
V
V
V
mA
mW
mW
W
°C
250
250
5.0
500
750
1700
3.0
-65 to +150
CHARACTERISTICS PER TRANSISTOR:
(TA=25°C)
TEST CONDITIONS
MIN
TYP
VCB=180V
VEB=3.0V
IC=100μA
IC=1.0mA
IE=100μA
IC=20mA,
IC=20mA,
IB=2.0mA
IB=2.0mA
25
35
25
50
250
250
5.0
MAX
250
100
UNITS
nA
nA
V
V
V
0.5
0.9
V
V
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V, IE=0, f=1.0MHz
VEB=3.0V, IC=0, f=1.0MHz
MHz
5.0
75
pF
pF
R0 (14-June 2013)
MPQ7093
SILICON
HIGH VOLTAGE
QUAD PNP TRANSISTOR
TO-116 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Collector Q1
2) Base Q1
3) Emitter Q1
4) No Connection
5) Emitter Q2
6) Base Q2
7) Collector Q2
8) Collector Q3
9) Base Q3
10) Emitter Q3
11) No Connection
12) Emitter Q4
13) Base Q4
14) Collector Q4
MARKING: FULL PART NUMBER
R0 (14-June 2013)
w w w. c e n t r a l s e m i . c o m