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MPQ7093_15

Description
SILICON HIGH VOLTAGE QUAD PNP TRANSISTOR
File Size662KB,4 Pages
ManufacturerCentral Semiconductor
Download Datasheet View All

MPQ7093_15 Overview

SILICON HIGH VOLTAGE QUAD PNP TRANSISTOR

MPQ7093
SILICON
HIGH VOLTAGE
QUAD PNP TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPQ7093 is
comprised of four independent PNP silicon transistors
mounted in a 14-pin DIP, designed for high voltage
amplifier applications.
MARKING: FULL PART NUMBER
TO-116 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (per transistor)
Power Dissipation (total package)
Power Dissipation (TC=25°C) (total package)
Operating and Storage Junction Temperature
ELECTRICAL
SYMBOL
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
Cib
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
PD
TJ, Tstg
UNITS
V
V
V
mA
mW
mW
W
°C
250
250
5.0
500
750
1700
3.0
-65 to +150
CHARACTERISTICS PER TRANSISTOR:
(TA=25°C)
TEST CONDITIONS
MIN
TYP
VCB=180V
VEB=3.0V
IC=100μA
IC=1.0mA
IE=100μA
IC=20mA,
IC=20mA,
IB=2.0mA
IB=2.0mA
25
35
25
50
250
250
5.0
MAX
250
100
UNITS
nA
nA
V
V
V
0.5
0.9
V
V
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V, IE=0, f=1.0MHz
VEB=3.0V, IC=0, f=1.0MHz
MHz
5.0
75
pF
pF
R0 (14-June 2013)

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