^Products.,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
The RF Line
NPN Silicon
RF Power Transistor
Designed primarily for high-voltage applications as a high-power linear
amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
•
Specified 50 Volt, 30 MHz Characteristics
Output Power = 250 W
Minimum Gain = 12 dB
Efficiency = 45%
Intermodulation Distortion @ 250 W (PEP) —
IMD = -30dB(Max)
100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR
MRF448
•
•
250 W, 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 211-11
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
Withstand Current — 10s
Total Device Dissipation @ TC = 25°C (1 )
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
(Tc
=
25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Ic = 200 mAdc, IB = 0)
Collector-Emitter Breakdown Voltage (Ic = 100 mAdc, VBE - 0)
Collector-Base Breakdown Voltage (Ic = 100 mAdc, IE = 0)
Emitter-Base Breakdown Voltage (IE = 10 mAdc, Ic = 0)
V(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
Symbol
Value
50
100
4.0
16
20
290
1.67
-65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
VCEO
V
CBO
V
EBO
"c
—
PD
T
stg
Watts
W/°C
°C
Symbol
Max
0.6
Unit
°C/W
ROJC
Symbol
Win
Typ
Max
Unit
50
100
100
4.0
—
—
—
—
—
—
—
—
Vdc
Vdc
Vdc
Vdc
NOTE:
1. PD is a measurement reflecting short term maximum condition. See SOAR curve for operating conditions.
(continued)
ELECTRICAL CHARACTERISTICS — continued
(Tc
=
25°C unless otherwise noted.)
Characteristic
ON CHARACTERISTICS
DC Current Gain
Symbol
Win
Typ
Max
Unit
(ic = 5.0 Adc, VCE = iovdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
hFE
10
30
—
—•
(VCB =
5
°
Vdc
.
]
E = o, f = 1 .0 MHZ)
FUNCTIONAL TESTS
Common-Emitter Amplifier Power Gain
0/CC =
50
Vdc,
p
out =
25
° W CW, f = 30 MHz, ICQ = 250 mA)
Collector Efficiency
(Vcc =
50 Vdc
>
p
out =
25
° W, f = 30 MHz, ICQ = 250 mA)
Intermodulation Distortion (2)
(VcE = 50 Vdc, Pout = 250 W (PEP), ICQ = 250 mA, f = 30 MHz)
Electrical Ruggedness
(Vcc =
50
Vdc,
p
out =
25
° W CW, f = 30 MHz,
VSWR 3:1 at all Phase Angles)
Cob
350
450
PF
G
PE
T|
IMD
12
—
—
14
45
65
-33
—
dB
% (PEP)
% (CW)
dB
—
-30
V
No Degradation in Output Power
NOTE:
2. To Mil-Std-1311 Version A, Test Method 2204, Two Tone, Reference each Tone.
R1
1
I
BIAS
S.
C3
-
LD
k
C4?
^CR1
cai
L3
C9?
;
ci
1
[
/
50 Vdc
N
/
L2
°T
L4
,
fWV>
.
INPUT
'
RF \>
W
1
C1|
"\
yf
//I
L1
nn-w*
CJ
T~
R2
(Y
vk
Vz
r.
/•—;
D.U.
>
"M
Jl
M
f
L
.
C7^
x
J
x
RF
\T
Jf
*
{
?
*C5
X
-^r—
C6
C1, C2, C5, C7 — 170-780 pF, Arco 469
C3, C8, C9 — 0.1 U.F, 100 V Erie
C4 — 500 nF @ 6.0 V
C6 — 360 pF, 3 x 120 pF 3.0 kV in parallel
C10 — 10 nF, 100V
R1 — 10 O, 10 Watt
R2— 10 ft 1.0 Watt
CR1 — 1N4997 or equivalent
L1 — 3 Turns, #16 Wire, 0.4" I.D., 0.3" Long
L2 — 0.8 nH, Ohmite Z-235 or equivalent
L3 — 12 Turns, #16 Enameled Wire Closewound 0.25" I.D.
L4 — 4 Turns, 1/8" Copper Tubing, 0.6" I.D., 1.0" Long
L5, L6 — 2.0 jiH, Fair-Rite 2643021801 Ferrite bead each or equivalent
Figure 1. 30 MHz Test Circuit Schematic
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