5A 600V 4 circuits Thyristor array
SLA0201
s
Features
q
5A 4 Thyristors combined one package
q
Repetitive peak off-state voltage: V
DRM
=600V
q
Gate trigger current: I
GT
=10mA max
16.0
±
0.2
13.0
±
0.2
9.9
±
0.2
8.5max
External Dimensions
(Unit: mm)
φ
3.2
±
0.15
31.0
±
0.2
24.4
±
0.2
16.4
±
0.2
3.2
±
0.15
×
3.8
4.8
±
0.2
1.7
±
0.1
q
Average on-state current: I
T(AV)
=5A
b
9.5min
(10.4)
0.8max
a
Thy1
Thy2
Thy3
Thy4
2.7
Pin 1
1.2
±
0.15
11
!
P2.54
±
0.7
=27.94
±
0.1
31.5max
12
+
0.2
0.85
–
0.1
+
0.2
1.45
±
0.15
0.55 –
0.1
2.2
0.7
1
2
3
4
5
6
7
8
9 10 11 12
a. Part Number
b. Lot Number
1 2 3 4 5 6 7 8 9 10 11 12
G K A G K A G K A G K A
1, 4, 7, 10 : Gate (G)
2, 5, 8, 11 : Cathode (K)
3, 6, 9, 12 : Anode (A)
Weight: Approx. 6.1g
sAbsolute
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Non-repetitive peak reverse voltage
Average on-state current
RMS on-state current
Surge on-state current
Peak forward gate current
Peak forward gate voltage
Peak reverse gate voltage
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Symbol
V
DRM
V
RRM
V
DSM
V
RSM
I
T(AV)
I
T(RMS)
I
TSM
I
FGM
V
FGM
V
RGM
P
GM
P
G(AV)
Tj
Tstg
Ratings
600
600
650
650
5.0
7.8
80
2.0
10
5.0
5.0
0.5
– 40 to +125
– 40 to +125
Unit
V
V
V
V
A
A
A
A
V
V
W
W
°C
°C
Conditions
Tj= –40 to +125°C, R
GK
=1kΩ
50Hz Half-cycle sinewave, Conduction angle 180°, Continuous current
50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C
f
f
f
50Hz, duty
50Hz
50Hz, duty
10%
10%
sElectrical
Characteristics
Parameter
Off-state current
Reverse current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Critical rate-of-rise of off-state voltage
Total power dissipation
Symbol
I
DRM
I
RRM
V
TM
V
GT
I
GT
V
GD
I
H
dv/dt
P
T
Ratings
min
typ
max
2.0
100
2.0
100
1.4
0.7
5.0
0.1
4.0
50
4
32
1.5
10
Unit
mA
µA
mA
µA
V
V
mA
V
mA
V/µS
W
Conditions
Tj=125
°C,
V
D
=600V, R
GK
=1kΩ
Tj=25
°C,
V
D
=600V, R
GK
=1kΩ
Tj=125
°C,
V
D
=600V, R
GK
=1kΩ
Tj=25
°C,
V
D
=600V, R
GK
=1kΩ
T
C
=25
°C,
I
TM
=10A
V
D
=6V, R
L
=10Ω, T
C
=25
°C
V
D
=1/2
×
V
DRM
, Tj=125
°C,
R
GK
=1kΩ
R
GK
=1kΩ, Tj=25
°C
V
D
=1/2
×
V
DRM
, Tj=125
°C,
R
GK
=1kΩ, C
GK
=0.033µF
Without Heatsink, T
j
=25
°C,
All elements operation
With infinite Heatsink, T
j
=25
°C,
All elements operation
22
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