REV LTR
-
A
B
Orig.
Updated
DESCRIPTION
DATE
6/15/12
10/25/13
12/15/16
APPVD.
MLG
MLG
MLG
Updated per ECN 2016-11
XSIS XE642S - L00, SERIES
HC/ACMOS OSCILLATORS
FOR SPACE APPLICATIONS
450 KHz to 125 MHz
( 7 x 9 mm, Formed-Leads, SMD, 3.3V)
(
Refer to Page 5 for Models with Reduced Screening & QCI )
REV STATUS
OF SHEETS
APPROVALS
PREP.
ENG.
Q. A.
CUST.
ENG.
CUST
Q A.
S. Gupta
M. Gupta
M. Gupta
REV
SHEET NO.
1
DATE
6/15/12
6/15/12
6/15/12
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XSIS ELECTRONICS, INC.
12620 W. 63
rd
Street, Shawnee, KS 66216 USA
XE642S - L00 SERIES HC/ACMOS
“S” LEVEL OSCILLATORS
FSC NO.
57051
SCALE
N/A
SHEET
DWG. NO.
XE642S-L00
1 OF 3
1.
SCOPE: XE642S-L00, HC/ACMOS series, high reliability hybrid microcircuit crystal oscillators are
designed, produced and tested by Xsis Electronics, Inc. as MIL-PRF-55310, Class “S” equivalent
devices for use in advanced military, avionics and space applications. These devices are of hybrid
microcircuit technology conforming to MIL-PRF-55310, Type 1, Class 2 oscillators.
2.
APPLICABLE DOCUMENTS:
MIL-PRF-55310E
MIL-PRF-38534H
MIL-STD-883H
Oscillator, Crystal Controlled, General Specifications for
Hybrid Microcircuits, General Specifications for
Test Methods and Procedures for Microelectronics
3.
3.1
3.2
REQUIREMENTS:
General: The individual item requirements shall be as specified herein.
Package: Ceramic, 90% Min. AL
2
O
3.
Thermal Resistance,
θ
JC
: 28 C / Watt.
o
3.2.1 Lead finish: 50 to 70 micro-inches gold over 100 to 250 micro-inches nickel. Hot Solder tinning with
Sn60/Pb40 solder per MIL-PRF-55310 is optional at an additional cost.
3.2.2 Weight:
0.5 Gms typical, 0.6 Gms Max.
o
3.2.3 Reflow Soldering: Reflow soldering at 260 C for 10 seconds shall not degrade the performance.
3.3
3.4
Hermeticity: Resistance welded, hermetically sealed, leak rate of 1(10)
-8
atm-cc/s Max.
Marking: As a minimum, the parts shall be marked with Xsis P/N, Xsis cage code, ESD symbol,
date code and serial number.
Absolute Maximum Ratings: Unless otherwise specified, absolute maximum ratings shall be as
follows:
Supply Voltage
-0.5 to +5 VDC
o
o
Operating Free-Air Temperature Range
-55 C to +125 C
o
o
Storage Temperature
-55 C to +125 C
3.5
3.6
Electrical Characteristics: See Table I
3.6.1 Total Dose Radiation: Hybrid Microcircuit Crystal Oscillators shall be capable of meeting the
electrical characteristics of Para. 3.6 after being exposed to total ionizing dose radiation of
100 krads as per MIL-STD-883, method 1019.
3.7
Hybrid Elements:
3.7.1 Quartz Crystals: High grade cultured quartz crystal shall be used. As an option, Xsis will use
premium Q swept quartz crystal at an additional charge, refer to part numbering example in
paragraph 6 to specify swept quartz crystal. Crystal element evaluation shall be in accordance
with MIL-PRF-55310.
3.7.2 Crystal Mounting: Crystal element shall be mounted at 4 points in such a manner as to provide
adequate ruggedness and performance under extreme environments specified herein.
FSC NO.
USA
DWG. NO.
REV
B
XSIS ELECTRONICS, INC.
12620 W. 63
rd
St., Shawnee, KS 66216
57051
SCALE
N/A
XE642S-L00
SHEET
2 OF 9
3.7.3 Passive Elements: Established Reliability (ER) QPL components, failure level R minimum shall
be used or element lot evaluation shall be as per MIL-PRF-55310, class S, or MIL-PRF-38534,
Appendix C, Class K as applicable.
3.7.4 Microcircuit die shall be from lots that have passed the element evaluation per MIL-PRF-55310,
Appendix B, Level S, except testing per Subgroup 5 is omitted. Subgroup 5 testing is circuit
configuration dependent, therefore, it is more effectively performed at the oscillator level as
explained in Paragraph 3.7.5 herein.
3.7.5 For Output Frequency up to 90 MHz, Microcircuit die used in the oscillator shall be from NSC/FC
54ACT family and must be from wafer lot that has been successfully tested in the oscillator for
ionizing radiation of up to100 krads Xsis Electronics has also performed SET & SEL testing on the
microcircuit die. Test reports are available on request. For output frequencies above 100 MHz, the
microcircuit die shall be from 0.8 µm BiCMOS Si family and must be from wafer lots that have been
successfully tested in the oscillator for ionizing radiation of up to 100Krads and is known to be
2
Single Event Latch-up immune for LET of up to 95 Mev-cm /mg.
3.7.6 Workmanship, Rework and Process controls shall be in accordance with the requirements of
MIL-PRF-55310.
3.7.7 Lot Traceability: Production lot for these oscillators shall be homogenous. Each element used in
the production lot shall be traceable to a single lot. Swept quartz shall be traceable to the quartz
bar, and its applicable processing details.
4.
Quality Assurance Provisions: The quality assurance provisions shall be per MIL-PRF-55310,
except as specified herein.
100% Screening: The 100% screening shall be performed as per Table II. PDA requirements for
nondestructive bond pull and burn-in shall be as specified below.
PDA for Nondestruct Bond Pull: Unless otherwise specified, PDA shall be 2% of total number of
wires or 1 wire whichever is greater.
PDA for Burn-in: Unless otherwise specified, PDA for burn-in shall be 2% or 1 oscillator whichever
o
o
is greater and shall be applicable to +23 C and/or +25 C static tests only. In addition Delta
Calculation shall be performed after Burn-in and shall count for PDA. All measured values for
Delta Calculation shall be recorded. Parts that exceed the specified delta limits shall be rejected and
be counted for PDA. Delta Calculation shall be performed at 3.3 VDC for the following parameters:
Input Current
Output High Level
Output Low Level
10% change Maximum
10% change Maximum
0.1V change Maximum
4.1
4.2
4.3
4.4
4.5
Group A inspection shall be in accordance with MIL-PRF-55310 for product level S.
Group B inspection ( 30 day aging ) shall be in accordance with MIL-PRF-55310 for product level S.
In order to expedite delivery, by customer request, the aging test can be ended after 15 days if the
amount of frequency aging is less than 50% of the 30 day specification limit.
Oscillators shall be capable of meeting group C inspection per MIL-PRF-55310. Generic group C
inspection data on similar parts may be used to satisfy this requirement. When specified by the
Customer, Xsis Electronics will perform Group C testing at an additional charge.
4.6
XSIS ELECTRONICS, INC.
12620 W. 63
rd
FSC NO.
USA
DWG. NO.
REV
B
St., Shawnee, KS 66216
57051
SCALE
N/A
XE642S-L00
SHEET
3 OF 9
4.7
Inspection and Test Data: Unless otherwise specified in the purchase order, the following
Inspection and test data documentation shall be supplied with the parts. ( See Page 5 for
the description of the Model Numbers other than XE642S )
Model XE641S:
Certificate of Conformance
Summary of Screening Test Results per Table II
PDA Calculations for Non-Destruct Bond Pull and Burn-in
Summary of Elements Lot Traceability
Electrical Tests before and after Burn-in
Group A Inspection Summary
Group B (30 day Aging) Data
Radiographic Inspection Certificate
Model XE641H:
Same as for
Model XE641S
except Group B (30 day Aging) Data
Model XE641E:
Certificate of Conformance
Summary of Screening Test Results per Table III
Summary of Elements Lot Traceability
Group A Inspection Summary
Radiographic Inspection Certificate, if required by the Purchase Order
Model XE641B:
Certificate of Conformance
Summary of Screening Test Results per Table III
Group A Inspection Summary
Radiographic Inspection Certificate, if required by the Purchase Order
Model XE641P:
Certificate of Conformance
4.8
The following test and inspection options are available at customer request.
Customer Source Inspection for Pre-Cap and Final
Group C Inspection per MIL-PRF-55310 on 4 or 8 units
DPA (Destructive Physical Analysis)
o
Life Test per MIL-STD-883, Method 1005, 1000 Hrs. at +125 C
MIL-PRF-38534, Group B Inspection
MIL-PRF-38534, Group C Inspection
5.0
Preservation, Packaging and Packing: The oscillators shall be clean, dry and packaged in a
manner to provide adequate protection against electrostatic discharge, corrosion, deterioration
and physical damage during shipment.
XSIS ELECTRONICS, INC.
12620 W. 63
rd
FSC NO.
USA
DWG. NO.
REV
B
St., Shawnee, KS 66216
57051
SCALE
N/A
XE642S-L00
SHEET
4 OF 9
6.0 Part Numbering Example:
XE642S - L
Model #
(See Note Below)
- FREQUENCY
Add Suffix “R” if Swept Quartz is Required
Add Suffix “ G ” if Enable/Disable is Required
Select Frequency Stability
Select Operating Temperature Range
1
2
3
4
5
6
=
=
=
=
=
=
+ 0.1%
+ 0.05%
+ 100 PPM
+ 50 PPM
+ 20 PPM
+ 10 PPM
1
2
3
4
5
6
=
=
=
=
=
=
0 C
o
-30 C
o
-55 C
o
-55 C
o
-40 C
o
-20 C
o
to
to
to
to
to
to
+70 C
o
+85 C
o
+125 C
o
+105 C
o
+95 C
o
+70 C
o
(
Frequency Stability Options 5 & 6 are not available for all Temperature Range Options
)
P/N Example: XE642S - L43 - 24.000 MHz = 24.000 MHz, Class “S” Oscillator, + 50 PPM Frequency Stability
o
o
over an operating temperature range of -55
C
to +125
C
,
NOTE:
Besides model XE642S above, the following additional models are available for applications that
can accommodate reduced level of Elements, Screening and Quality Conformance inspection:
XE642H: Model XE642H
is same as
Model XE642S
except as follows:
Group B inspection (30 day aging ) per MIL-PRF-55310 is not applicable
XE642E: Model XE642E
uses the same design & elements as
Model XE642S
except as follows,
100% screening is as per Table III herein
PDA for Burn-in is 10% or 1 unit whichever is greater
Delta measurements of paragraph 4.3 are not applicable
Group A inspection is as per MIL-PRF-55310, Class B
Group B inspection (30 day aging ) per MIL-PRF-55310 is not applicable
XE642B: Model XE642B
is same as
Model XE642E
except as follows:
Active and Passive Elements are as per MIL-PRF-55310, Class B. Microcircuit die
is similar to the one used in Model XE642S but is not from radiation tested wafer lot.
XE642P: Model XE642P
is a form, fit and function equivalent prototype of
Model XE642S.
Prototypes may use commercial grade elements and are not screened. Quality
Conformance inspection is not applicable.
XSIS ELECTRONICS, INC.
12620 W. 63
rd
FSC NO.
USA
DWG. NO.
REV
B
St., Shawnee, KS 66216
57051
SCALE
N/A
XE642S-L00
SHEET
5 OF 9
Analogue and Mixed Signal
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