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TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MUR1610CT, MUR1615CT,
MUR1620CT, MUR1640CT,
MUR1660CT
SWITCHMODE™
Power Rectifiers
These state-of-the-art devices are a series designed for use in
switching power supplies, inverters and as free wheeling diodes.
Features
•
•
•
•
•
•
•
•
•
Ultrafast 35 and 60 Nanosecond Recovery Times
175°C Operating Junction Temperature
Popular TO-220 Package
Epoxy Meets UL 94 V-0 @ 0.125 in
High Temperature Glass Passivated Junction
High Voltage Capability to 600 V
Low Leakage Specified @ 150°C Case Temperature
Current Derating @ Both Case and Ambient Temperatures
Pb-Free Packages are Available*
^
T
.
ULTRAFAST RECTIFIERS
16 AMPERES, 100-600 VOLTS
!
0
3°
^|
<—02,4
W
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MIF
TO-220AB
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
MUR1610CT, MUR1615CT, MUR1620CT, MUR1640CT, MUR1660CT
MAXIMUM RATINGS
MUR16
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Total Device, (Rated V
R
), T
c
= 150°C
Peak Rectified Forward Current
(Rated V
R
, Square Wave, 20 kHz), T
c
= 1 50°C
Per Leg
Total Device
Per Diode Leg
Symbol
V
RRM
10CT
100
15CT
150
20CT
200
40CT
400
60CT
600
Unit
V
VRWM
VR
!F(AV)
8.0
16
16
A
A
A
IFM
'FSM
NonrepetJtive Peak Surge Current
(Surge applied at rated load conditions haHwave, single phase, 60 Hz)
Operating Junction Temperature and Storage Temperature
100
Tj, T
stg
-65 to +175
°o
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
(Per Diode Leg)
Parameter
Maximum Thermal Resistance, Junction-to-Case
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 8.0 A, T
c
= 150°C)
(i
F
= 8.0 A, TC = 25°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, T
c
= 150°C)
(Rated DC Voltage, T
c
= 25°C)
Maximum Reverse Recovery Time
(I
F
= 1 .0 A, di/dt = 50 A/us)
(I
F
= 0.5 A, I
R
= 1 .0 A, I
REC
= 0.25 A)
1. Pulse Test: Pulse Width = 300 us. Duty Cycle < 2.0%
Symbol
1620
Symbol
RBJC
3.0
Value
2.0
Unit
°C/W
1640
1.00
1.30
1660
1.20
1.50
Unit
V
VF
0.895
0.975
250
5.0
35
25
IR
HA
500
10
ns
60
50
trr
Wireless Connectivity
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