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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP160N04TUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP160N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP160N04TUG-E1-AY
NP160N04TUG-E2-AY
Note
Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 800 p/reel
PACKAGE
TO-263-7pin (MP-25ZT) typ. 1.5 g
Note
Pb-free (This product does not contain Pb in the external electrode).
FEATURES
•
Super low on-state resistance
R
DS(on)
= 1.6 mΩ TYP. / 2.0 mΩ MAX. (V
GS
= 10 V, I
D
= 80 A)
•
High Current Rating
I
D(DC)
=
±160
A
(TO-263-7pin)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
40
±20
±160
±640
220
1.8
175
−55
to
+175
372
61
372
V
V
A
A
W
W
°C
°C
mJ
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Energy
Note2
Note3
Note3
E
AS
I
AR
E
AR
Repetitive Avalanche Current
Repetitive Avalanche Energy
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 20 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V, L = 100
μ
H
3.
R
G
= 25
Ω,
T
ch(peak)
≤
150°C
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
0.68
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18754EJ1V0DS00 (1st edition)
Date Published May 2007 NS CP(K)
Printed in Japan
2007
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