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BTA204-500B

Description
Three quadrant triacs high commutation
CategoryAnalog mixed-signal IC    Trigger device   
File Size34KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BTA204-500B Overview

Three quadrant triacs high commutation

BTA204-500B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current50 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current30 mA
JESD-609 codee0
Maximum leakage current0.5 mA
Maximum on-state voltage1.5 V
Maximum operating temperature125 °C
Maximum rms on-state current4 A
Off-state repetitive peak voltage500 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Trigger device typeTRIAC
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
GENERAL DESCRIPTION
Passivated high commutation triacs in
a plastic envelope intended for use in
circuits where high static and dynamic
dV/dt and high dI/dt can occur. These
devices will commutate the full rated
rms current at the maximum rated
junction temperature without the aid of
a snubber.
BTA204 series B and C
QUICK REFERENCE DATA
SYMBOL
PARAMETER
BTA204-
BTA204-
V
DRM
I
T(RMS)
I
TSM
Repetitive peak
off-state voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX.
500B
500C
500
4
25
MAX.
600B
600C
600
4
25
MAX. UNIT
800B
800C
800
4
25
V
A
A
PINNING - TO220AB
PIN
1
2
3
tab
DESCRIPTION
main terminal 1
PIN CONFIGURATION
tab
SYMBOL
T2
main terminal 2
gate
main terminal 2
1 23
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave;
T
mb
107 ˚C
full sine wave;
T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 6 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
CONDITIONS
MIN.
-
-
-500
500
1
MAX.
-600
600
1
4
-800
800
UNIT
V
A
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
-
-
25
27
3.1
100
2
5
5
0.5
150
125
A
A
A
2
s
A/µs
A
V
W
W
˚C
˚C
over any 20 ms
period
-
-
-
-
-40
-
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
December 1998
1
Rev 1.000

BTA204-500B Related Products

BTA204-500B BTA204-500C BTA204-800C BTA204-800B
Description Three quadrant triacs high commutation Three quadrant triacs high commutation Three quadrant triacs high commutation Three quadrant triacs high commutation
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow unknow unknow unknow
Critical rise rate of minimum off-state voltage 1000 V/us 1000 V/us 1000 V/us 1000 V/us
Maximum DC gate trigger current 50 mA 35 mA 35 mA 50 mA
Maximum DC gate trigger voltage 1.5 V 1.5 V 1.5 V 1.5 V
Maximum holding current 30 mA 15 mA 15 mA 30 mA
JESD-609 code e0 e0 e0 e0
Maximum leakage current 0.5 mA 0.5 mA 0.5 mA 0.5 mA
Maximum on-state voltage 1.5 V 1.5 V 1.5 V 1.5 V
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C
Maximum rms on-state current 4 A 4 A 4 A 4 A
Off-state repetitive peak voltage 500 V 500 V 800 V 800 V
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Trigger device type TRIAC TRIAC TRIAC TRIAC
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