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BTA204M-800C

Description
Three quadrant triacs high commutation
CategoryAnalog mixed-signal IC    Trigger device   
File Size38KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BTA204M-800C Overview

Three quadrant triacs high commutation

BTA204M-800C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current35 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current15 mA
JESD-609 codee0
Maximum leakage current0.5 mA
Maximum on-state voltage1.7 V
Maximum operating temperature125 °C
Maximum rms on-state current4 A
Off-state repetitive peak voltage800 V
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Trigger device typeTRIAC
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
GENERAL DESCRIPTION
Passivated high commutation triacs in
a plastic envelope suitable for surface
mounting intended for use in circuits
where high static and dynamic dV/dt
and high dI/dt can occur. These
devices will commutate the full rated
rms current at the maximum rated
junction temperature without the aid of
a snubber.
BTA204S series B and C
BTA204M series B and C
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
MAX.
600B
600C
600
4
25
MAX. UNIT
800B
800C
800
4
25
BTA204S
(or BTA204M)-
500B
BTA204S
(or BTA204M)-
500C
Repetitive peak
500
off-state voltages
RMS on-state current
4
Non-repetitive peak on-state 25
current
V
DRM
I
T(RMS)
I
TSM
V
A
A
PINNING - SOT428
PIN
Standard Alternative
NUMBER
S
M
1
2
3
tab
MT1
MT2
gate
MT2
gate
MT2
MT1
MT2
PIN CONFIGURATION
tab
SYMBOL
T2
T1
2
1
3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave;
T
mb
107 ˚C
full sine wave;
T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 6 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
CONDITIONS
MIN.
-
-
-500
500
1
MAX.
-600
600
1
4
-800
800
UNIT
V
A
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
-
-
25
27
3.1
100
2
5
5
0.5
150
125
A
A
A
2
s
A/µs
A
V
W
W
˚C
˚C
over any 20 ms
period
-
-
-
-
-40
-
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
December 1998
1
Rev 1.000

BTA204M-800C Related Products

BTA204M-800C BTA204-600 BTA204M-500C BTA204M-600C BTA204M-600B BTA204M-800B BTA204S-500B BTA204S-500C BTA204S-600B BTA204S-800B
Description Three quadrant triacs high commutation Three quadrant triacs high commutation Three quadrant triacs high commutation Three quadrant triacs high commutation Three quadrant triacs high commutation Three quadrant triacs high commutation Three quadrant triacs high commutation Three quadrant triacs high commutation Three quadrant triacs high commutation Three quadrant triacs high commutation
Is it Rohs certified? incompatible - incompatible incompatible incompatible incompatible incompatible incompatible conform to conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) - Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow - unknow unknow unknow unknow unknow unknow _compli _compli
Critical rise rate of minimum off-state voltage 1000 V/us - 1000 V/us 1000 V/us 1000 V/us 1000 V/us 1000 V/us 1000 V/us 1000 V/us 1000 V/us
Maximum DC gate trigger current 35 mA - 35 mA 35 mA 50 mA 50 mA 50 mA 35 mA 50 mA 50 mA
Maximum DC gate trigger voltage 1.5 V - 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V
Maximum holding current 15 mA - 15 mA 15 mA 30 mA 30 mA 30 mA 15 mA 30 mA 30 mA
JESD-609 code e0 - e0 e0 e0 e0 e0 e0 - -
Maximum leakage current 0.5 mA - 0.5 mA 0.5 mA 0.5 mA 0.5 mA 0.5 mA 0.5 mA 0.5 mA 0.5 mA
Maximum on-state voltage 1.7 V - 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V
Maximum operating temperature 125 °C - 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Maximum rms on-state current 4 A - 4 A 4 A 4 A 4 A 4 A 4 A 4 A 4 A
Off-state repetitive peak voltage 800 V - 500 V 600 V 600 V 800 V 500 V 500 V 600 V 800 V
surface mount YES - YES YES YES YES YES YES YES YES
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - -
Trigger device type TRIAC - TRIAC TRIAC TRIAC TRIAC TRIAC TRIAC TRIAC TRIAC

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