'jziizu <^s.tni-(Lonauctoi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
ne,
i,
O
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
RFH35N08, RFH35N10
Power MOS Field-Effect Transistors
N-Chanhel Enhancement-Mode
Power Field-Effect Transistors
35 A, 8 0 V - 1 0 0 V
TERMINAL DIAGRAM
D
rosiom = 0.055 O
Features:
SOA Is power-dissipation limited
Nanosecond switching speeds
Linear transfer characteristics
High Input Impedance
Majority carrier device
High-current, low-Inductance package
N-CHANNEL ENHANCEMENT MODE
The RFH35N08 and RFH35N10* are n-channel enhance-
ment-mode silicon-gate power field-effect transistors
designed for applications such as switching regulators,
switching converters, motor drivers, relay drivers, and
drivers for high-power bipolar switching transistors
requiring high speed and low gate-drive power. These types
can be operated directly from integrated circuits.
The RFH-types are supplied In the JEDEC TO-21BAC
plastic package.
TERMINAL DESIGNATIONS
JEDEC TO-218AC
MAXIMUM RATINGS,
Absolute-Maximum Values (T
a
=
25°C):
RFH35N08
DRAIN-SOURCE VOLTAGE
DRAIN-GATE VOLTAGE. R,. • 1 MO
GATE-SOURCE VOLTAGE
DRAIN CURRENT. RMS Continuous
Pulsed
POWER DISSIPATION @ T
0
= 25° C
Derate above T
c
» 85° C
OPERATING AND STORAGE TEMPERATURE.
Voss
VOOR
Voa
ID
IDM
Pi
.Ti, T,,,
HFH35N10
80
80
100
100
±20
35
100
150
1.2
.-5510*160.
V
V
V
A
A
W
W/«C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
RFH35N08, RFH35N10
ELECTRICAL CHARACTERISTICS. •< Gait Temperature (T
c
) = 25° C unl*M oth«rwl*» *p»Cl(l«d.
LIMITS
CHARACTERISTIC
SYMBOL
TEST
CONDITIONS
RFH35N08
Mln.
Max.
RFH3SN10
Mln.
Max.
UNITS
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Zero Gals Voltage Drain
Current
BVoss
Vas(th)
lass
ID
-
1 rnA
V
os
= 0
V
H5
= VDB
IB = 1 mA
V
DS
- 65 V
Vos = 80 V
80
2
—
4
1
100
2
—
4
V
V
1
pA
-
—
—
—
—
10
—
—
—
50
100
-
50
—
—
—
—
10
—
—
-
100
nA
T
C
= 125°C
V
DS
= 65 V
Vos - 80 V
Gate-Source Leakage
Current
Drain-Source On Voltage
loss
Vos{on)«
Vos = ± 20 V
Vos-0
lo =17.5 A
Vos • 10V
ID = 35 A
V
os
-
10 V
0.963
3.0
0.963
3.0
V
Static Drain-Source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Thermal Resistance
Junction-to-Case
rns(on)*
g..»
C,,.
C...
lo = 17.5 A
Vos = 10 V
Vos = 10V
lo= 17.5 A
V
os
= 25 V
Vas = 0 V
f = 1 MHz
V
DD
= 50 V
I
0
= 17.5 A
0.055
—
0.055
—
Q
mho
3000
1500
3000
1500
PF
C™
600
100
450
450
350
0.63
600
100
450
450
350
0.63
°C/W
ti(on)
t,
to(Off)
t<
R«JC
45(typ)
225(typ)
240(typ)
185(typ)
-
45(typ)
225(typ)
240(typ)
165(typ)
-
twn,.»son
V
08
= 10V
RFH35N08,
RFH3SN10
Series
ns
•Pulsed: Puise duration = 300 /is max., duty cycle = 2%.
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
LIMITS
CHARACTERISTIC
TEST CONDITIONS
RFH35N08
Mln.
Max.
RFH35N10
Mln.
Max.
UNITS
Diode Forward Voltage
Reverse Recovery Time
V
SD
'
tn
!SD=
17.5A
-
1.4
-
1.4
V
ns
IF - 4A, di
f
/d, = 100A//JS
200 (typ.)
200 (typ.)
' Pulsed: Pulse duration ~ 300 /is max., duty cycle = 2%.
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