, U
na,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L
N-Channel Logic Level
Power Field-Effect Transistors (L
2
FET)
1 and 2 A. 180V and 200V
rem:
3,5 fl and 3,65
0
Features:
•
Design optimized lor 5 volt gale drive
• Can {>8
driven directly from Q-MOS, N-MOS, TTL Circuits
•
Compatible with automotive drive requirements
•
SOA is power-dissipation limited
•
Nanosecond switching speeds
•
Linear transfer characteristics
•
High Input impedance
• jWa/or/fy
carrier device
N-CHANNEL ENHANCEMENT MODE
TERMINAL DESIGNATIONS
RFL1N18L
RFL1N20L
The RFL1N18L and RFL1N20L and the RFP2N18L and
RFP2N20L are n-channel enhancement-mode silicon-gate
power, field-effect transistors specifically designed for use
with logic level (5 volt) driving sources In applications such
as programmable controllers, automotive switching, and
solenoid drivers. This performance Is accomplished through
a special gate oxide design which provides full rated con-
duction at gate biases In the 3-5 volt range, thereby facilitat-
ing true on-off power control directly from logic circuit
supply voltages.
The RFL-series types are supplied in the JEDEC TO-205AF
metal package and the RFP-saries types In the JEDEC TO-
220A8 plastic package.
JEDEC TO-205AF
RFP2N18L
RFP2N20L
JEDEC TO-220AB
MAXIMUM RATINGS,
Absolute-Maximum Values
(Te=25°
C):
DRAIN-SOURCE VOLTAGE
V
OM
DRAIN-GATE VOLTAGE (fV"1 MO) .... VOCB
GATE-SOURCE VOLTAGE
V
0
»
DRAIN CURRENT, RMS Continuous
I
0
Pulsed
lou
POWER DISSIPATION @ T
e
=25° C
Pi
Derate above T
0
=25*C
OPERATING AND STORAGE
TEMPERATURE
T,. T,,,
RFL1N18L
180
180
1
8.33
0.0667
RFL1N20U
200
200
—
1
8.33
0.0667
-55 to *150
RFP2N18L
180
180
±10
2
25
0.2
RFPSN20L
200
200
2
25
0.2
V
V
V
A
A
W
wrc
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L
ELECTRICAL CHARACTERISTICS,
Al Case Temperature (T
C
)=2$°C unless otherwise specified.
LIMITS
RFL1N18L
RFL1NZOL
RFP2N18L
RFP2N20L
MIN.
MIN.
MAX.
MAX.
160
200
—
—
1
2
1
1
-
—
RFP
RFL
RFP
RFL
RFP
RFL
—
—
—
—
—
—
800
—
—
—
10(typ)
10(typ)
25(lyp)
tol-t
4
20(typ)
RFL
30(typ>
—
—
50
100
3.5
3.65
9
9.3
3.5
3.65
-
200
60
20
25
30
40
25
50
15
5
-
—
—
—
—
—
—
—
800
—
—
—
10(typ)
10(typ)
25(typ)
20(typ)
30(typ;
50
100
3.5
3.65
9
9.3
3.5
3.65
-
200
60
20
25
30
40
25
50
15
5
/-A
nA
1
2
CHARACTERISTIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
" Zero Gate Voltage Drain Current
SYMBOL
BVoos
V
0
,(th)
loss
TEST
CONDITIONS
I
DC
1 mA
V
Q3
=0
Vas=V
ra
I
0
=1 mA
V
M
=145V
V
M
=160V
T
C
=125°C
Vos=145V
Vos=160V
Vos=±10V
V
DS
-0
I
D
=1 A
V
os
=5 V
I
0
=2A
V
os
=5 V
b=1 A
V
os
=5 V
V
P8
=10 V
lo=1 A
V
DS
=25 V
UNITS
V
V
Gate-Source Leakage Current
Drain-Source On Voltage
loss
Voslon)'
V
Static Drain-Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Thermal Resistance
Junction-lo-Case
ros(on)'
9..'
n
mmho
c,»
c«
c™
Won)
t,
td(Off)
t,
Vos=0 V
f=1MHz
V
00
=MOOV
b-1 A
R,.n=°°
PF
ns
R
01
>$.2S 0
V
QS
=5V
RFL1N18L,
RFL1N20L
RFP2N18L.
RFP2N20L
R0«
—
—
°C/W
•Pulsed: Pulse duration • 300 ^s max., duty cycle » 2%.
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
LIMITS
RFL1N18L
RFL1N20L
RFP2N18L
RFP2N20L
MIN.
MAX.
MIN.
MAX.
_
_
1.4
1,4
200{typ)
200(typ)
CHARACTERISTIC
Diode Forward Voltage
Reverse Recovery Time
SYMBOL
V
SD
!„
TEST
CONDITIONS
lso=1 A
l
f
-2A
diF/d,=60
M/JS
UNITS
V
ns
•Pulse Test: Width
<
300//s, duty cycle < 2%.
Embedded System
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