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RS1D-E3

Description
1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC
CategoryDiscrete semiconductor    diode   
File Size83KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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RS1D-E3 Overview

1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC

RS1D-E3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
Maximum non-repetitive peak forward current30 A
Number of components1
Maximum operating temperature150 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.15 µs
surface mountYES
Base Number Matches1
RS1A, RS1B, RS1D, RS1G, RS1J, RS1K
www.vishay.com
Vishay General Semiconductor
Surface Mount Fast Switching Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Fast switching for high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AC (SMA)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive and telecommunication.
1.0 A
50 V, 100 V, 200 V, 400 V, 600 V,
800 V
30 A
150 ns, 250 ns, 500 ns
1.3 V
150 °C
DO-214AC (SMA)
Single die
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
Package
Diode variation
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
L
= 90 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
SYMBOL
RS1A
RA
50
35
50
RS1B
RB
100
70
100
RS1D
RD
200
140
200
1.0
30
- 55 to + 150
RS1G
RG
400
280
400
RS1J
RJ
600
420
600
RS1K
RK
800
500
800
V
V
V
A
A
°C
UNIT
Revision: 21-Aug-13
Document Number: 88707
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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