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NCE6075K

Description
NCE N-Channel Enhancement Mode Power MOSFET
File Size408KB,8 Pages
ManufacturerNCE Power
Websitehttp://www.ncepower.com
Download Datasheet View All

NCE6075K Overview

NCE N-Channel Enhancement Mode Power MOSFET

Pb Free Product
http://www.ncepower.com
NCE6075K
NCE N-Channel
Enhancement Mode Power MOSFET
Description
The NCE6075K uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
General Features
V
DS
=60V,I
D
=75A
R
DS(ON)
< 11.5mΩ @ V
GS
=10V (Typ:9.1mΩ)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high E
AS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible Power Supply
Marking and pin assignment
100% UIS TESTED!
100%
∆Vds
TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
NCE6075K
Device
NCE6075K
Device Package
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T
C
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(T
C
=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy
(Note 5)
Operating Junction and Storage Temperature Range
E
AS
Symbol
V
DS
V
GS
I
D
I
D
(100℃)
Limit
60
±20
75
50
300
110
0.73
450
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
I
DM
P
D
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Case
(Note 2)
R
θJC
1.36
/W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.2
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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