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BAV19W

Description
0.2 A, 120 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size851KB,3 Pages
ManufacturerDIOTECH
Websitehttp://www.kdiode.com/
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BAV19W Overview

0.2 A, 120 V, SILICON, SIGNAL DIODE

BAV19W Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionSOD-123, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingtin silver
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Maximum power consumption limit0.4100 W
Diode typeSignal diode
Maximum reverse recovery time0.0500 us
Maximum repetitive peak reverse voltage120 V
Maximum average forward current0.2000 A
BAV19W THRU BAV21W
SURFACE MOUNT FAST SWITCHING DIODE
Features
High Conductance
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose Switching Application
C
Plastic Material – UL Recognition Flammability
Classification 94V-O
E
A
Dim
A
SOD-123
Min
3.6
2.5
1.4
0.5
0.4
0.95
Max
3.9
2.8
1.8
0.7
0.2
1.35
0.12
B
D
B
C
D
E
Mechanical Data
H
J
G
G
H
J
Case: SOD-123, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.01 grams (approx.)
@T
A
=25°C unless otherwise specified
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
@ t = 1.0ms
@ t = 1.0s
I
FSM
P
d
R
JA
All Dimensions in mm
Maximum Ratings
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
BAV19W
120
100
70
BAV20W
200
150
105
400
200
2.5
0.5
410
500
-65 to +150
BAV21W
250
200
140
Unit
V
V
V
mA
mA
A
mW
K/W
°C
T
j
, T
STG
Electrical Characteristics
Characteristic
Forward Voltage Drop
Peak Reverse Leakage Current
At Rated DC Blocking Voltage
@T
A
=25°C unless otherwise specified
Symbol
@ I
F
= 100mA
V
FM
I
RM
C
j
t
rr
100
BAV19W
BAV20W
1.0
150
5.0
50
200
BAV21W
Unit
V
nA
pF
nS
Typical Junction Capacitance (V
R
= 0V DC, f = 1.0MHz)
Reverse Recovery Time (Note 2)
Note: 1. Valid provided that terminals are kept at ambient temperature.
2. Measured with I
F
= I
R
= 30mA, I
RR
= 0.1 x I
R
, R
L
= 100 .

BAV19W Related Products

BAV19W BAV21W
Description 0.2 A, 120 V, SILICON, SIGNAL DIODE 0.2 A, 250 V, SILICON, SIGNAL DIODE

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