SEF101M~SEF107M
Elektronische Bauelemente
VOLTAGE 50 ~ 1000 V
1.0 Amp High Efficiency Recovery Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen-free
FEATURES
SOD-123M
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application
in order to optimize board space.
High current capability.
Fast switching for high efficiency.
Glass passivated chip junction.
A
B
F
D
C
E
E
MECHANICAL DATA
Case: Molded plastic, SOD-123M / Mini SMA
Epoxy: UL94-V0 rated flame retardant
Terminals: Plated terminals, solderable per MIL-STD-750,
Method 2026.
Polarity: Indicated by cathode band
Weight: 0.018 gram (Approximately)
Millimeter
REF.
Min.
Max.
3.90
1.80
1.70
D
E
F
REF.
Millimeter
Min.
Max.
MARKING CODE
Part Number
Marking Code
Part Number
Marking Code
A
B
C
3.50
1.40
1.30
3.60 (Max.)
0.80 (Typ.)
0.30 (Typ.)
SEF101M
SEF102M
SEF103M
SEF104M
H1
H2
H3
H4
SEF105M
SEF106M
SEF107M
H5
H6
H7
PACKAGE INFORMATION
Package
SOD-123M
MPQ
2.5K
LeaderSize
7’ inch
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified.)
Part Number
Parameter
Repetitive Peak
Reverse Voltage (Max.)
RMS Voltage (Max.)
Continuous Reverse Voltage (Max.)
Symbol
V
RRM
V
RMS
V
R
SEF
101M
50
35
50
SEF
102M
100
70
100
SEF
103M
200
140
200
SEF
104M
400
280
400
SEF
105M
600
420
600
SEF
106M
800
560
800
SEF
107M
1000
700
1000
Unit
V
V
V
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Feb-2011 Rev. A
Page 1 of 3
SEF101M~SEF107M
Elektronische Bauelemente
VOLTAGE 50 ~ 1000 V
1.0 Amp High Efficiency Recovery Rectifiers
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Part Number
Parameter
Forward Voltage (Max.)
Average Forward
Rectified Current (Max.)
Symbol
V
F
I
O
SEF
101M
SEF
102M
1
SEF
103M
SEF
104M
1.3
1
SEF
105M
SEF
106M
1.7
SEF
107M
Unit
V
A
Testing
Condition
Ambient
Temperature =50°C
8.3ms single half
sine-wave
superimposed on rated
load (JEDEC method)
Forward Surge Current
DC Reverse Current at
Rated DC Blocking Voltage
(Max.)
Thermal Resistance
Junction to Ambient (Typ.)
Diode Junction Capacitance
(Typ.)
Storage and Operating
Temperature Range
Reverse recovery time
I
FSM
30
5
150
42
20
-65 ~ 175, -55 ~ 150
50
75
A
I
R
R
JA
C
J
T
STG
, T
J
T
RR
A
°C/W
pF
°C
nS
V
R
=V
RRM
, T
A
=25°C
V
R
=V
RRM
,T
A
=100°C
f=1MHz and applied 4V
DC reverse voltage
Note:
1.
Reverse recovery time test condition, I
F
=0.5A, I
R
=1A, I
RR
=0.25A.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Feb-2011 Rev. A
Page 2 of 3
SEF101M~SEF107M
Elektronische Bauelemente
VOLTAGE 50 ~ 1000 V
1.0 Amp High Efficiency Recovery Rectifiers
RATINGS AND CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Feb-2011 Rev. A
Page 3 of 3
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