LJ
, O
ne..
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
2N5441-2N5446, T6420 Series
40-A Silicon Triacs
Feature*:
•
di/dt capability^ 100 Alps
• Low switching tosses
• LOW on-stale voltage at high current levels
m Low thermal resistance
^""""-^^Voltafle
Packagt ^~^^^___^
Press-Fit
Stud
Isolated-Stud
200V
Typ«»
2N5441
2N5444
T6420B
400V
Typei
2N5442
2N5445
T6420D
600V
Type*
2N5443
2N5446
T6420M
TERMINAL DESIGNATIONS
OATE
T6420 Serte«
2N5444-46
MAXIMUM RATINGS,
Absolute-Maximum Values:
For Operation with Sinusoidal Supply Voltage at Frequencies up to 50/60 Hz and with resistive or Inductive Load
2NS441
SNM4S
2N5443
2N5444
2NS445
2N5Ǥ
• REPETITIVE PEAK OFF-STATE VOLTAGE », VanH
T9480B
T6420D
TC420M
GateOpen,Tj = -65to100'C
200
400
600
RMS ON-STATE CURRENT (Conduction angle - 360° C), l
T
«us,
Case temperature
Tc » 70°C (Press-fit types).
40
T
c
= 65'C (Stud types)
40
Tc• 60°C(Isolated-studtypes)
40
_..
For other conditions
See Fig. 3
PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT, II.M
For one cycle of applied principal voltage
60 Hz (sinusoidal)
300
50 Hz (sinusoidal)
_^_____
. 2B5
For more than one cycle of applied principal voltage
See Fig. 4
RATE OF CHANGE OF ON-STATE CURRENT, dl/dt
VDM =• VOMM, IOY « 200 mA, I, * 0.1 0s
(Sea
Flo. 12)
100
FUSING CURRENT (for Triac Protection), I't
Tj = -65tol10°C, 1 = 1.25 to 10ms
450
• PEAK GATE-TRIGGER CURRENT •, loiu
For1|/smax
_______
-12
_
• GATE POWER DISSIPATION
Peak (For 10 /s max., IDTM £ 4 A, P
OM
40
Average, Poi/m
___„___—_ 0.76
• TEMPERATURE RANGE A
Storage, T.»
-66 to 150
—
Operating (Case), To
-65 to 110
• TERMINAL TEMPERATURE (During Soldering), TT
For 10S max. (terminals and case)
225
STUD TORQUE, rs
Recommended
'.... ______—.— 35
Maximum (DO NOT EXCEED)
SO
• In accordance with JEDEC registration data format (JS-14, RDF2) filed for the JEDEC (2N-Serles) types.
• For either polarity of main terminal 2 voltage (Vun) with reference to main terminal 1.
• For either polarity of gate voltage (Va) with reference to main terminal 1.
& For temperature measurement reference point, aee Dimensional Outline
V
A
A
A
A
A
A/js
A's
A
W
W
°C
•C
°C
In-lb
In-lb
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
2N5441-2N5446,
T6420 Series
ELECTRICAL CHARACTERISTICS
At Maximum Ratings
Unless Otherwise
Specified and at Indicated
Caie Temperature (T
c
)
LIMITS
CHARACTERISTIC
SYMBOL
FOR ALL TYPES
UN LESS OTHERWISE
SPECIFIED
MIN.
TYP.
UNITS
MAX.
peak Off- State Current:
4
Gate open, Tj - 110°C, V
DROM
"
Max. rated value
Maximum On-State Voltuij»:*
For i
T
*•
100 A (peak) TC - 20°C
For 1-r » 66 A (peak) TQ " 25° C , . , -
DC Holding Current:*
Gate open. Initial principal current - GOO mA (del, V
D ta
12V:
Tg « 2B
a
C .
.. , , ,
T
C
» -65°C
*
'DROM
_
0.2
«•
mA
VTM
-
1.7
1.E
2
1.86-
V
-
28
See Fig. 6
'HO
60
100'
mA
Critical Rate of Rise of Commutation Voltage:*
Forv
D
. V
DROM
, |
T(RMS)
= 40A,
GO
mmut8tinQ
di/dt - 22 AAm, gate unenergizad, (See FlQ. 13):
TQ - 70°C (Pron-fit WP*0
R
Q1?C
(Stud types! . . , ,
dv/dt
6-
5'
E
30
30
30
-
V/JiS
Critical Rate of Rise of Off-State Voltage:*
ForvQ - VDRQM- exponential voltage rise, gate open,
T
c
- IIQPC;
dv/dt
BO'
M'
JO-
200
150
100
V/m
-
DC Gate-Trigger Current:**
Forv
D
- 12V(dc)
R
L
- 30 n
T
c
- 2B°C
Mode
l
+
HI"
I"
lll
+
Mod.
I
4
lr
i
1"
Ml*
V
MT2
positive
negative
positive
negative
V
MT2
positive
negativB
positive
negative
V
Q
potltive
nagative
nft^ativ*
positive
V
0
potitlvn
negative
negative
poiitiv*
-
15
30
X
40
SO
60
80
80
mA
126'
128'
240'
240-
'GT
For V
D
- 12 Vide)
RL " 3011
T
c
« -C5"C
S
ee Flgl. 7 &
«
DC Gaw-TriMet Voltags:**
Forv
D
- 12V (del. R
L
• 30 n,
TQ - 2Ef C
*.«,.,..,,
. -flg'c
For V
D
i=
v
onOM
R
L
V
OT
1.3S
1.8
SHFIg.S
0.2
2.6
3.4-
V
"
^^
n
'~fr "
1 1tf"C
Gate-Controlled Turn-On Tima:
(Delay Time + Ri« Time)
Forv
D
- V
DROM
, I
QT
- 200mA,t
r
- 0.1
ia,
iy
"
60 A (peak) TQ - 26*C (See Figs 10&14)
Thermal Resistance, Junction-to-case:
Steady -State
....
V
1.7
3
V
-
Stud types
,
«...
««JC
0.8'
0.9'
1
•c/w
See
Fig.
11
• In KCOtd.nijs with JEDEC rnlltr»tlon d.ts (ormtt (JS-14, RDF 21 filed lor tha JEDEC (2N-S«rlll) typ.t
* For either polarity or meln termlnel 2 voltBg« (V
MT2
) with reference to rneln termlnel 1.
e For either polarity of gate voltage (VQ) with reference to main terminal 1.
京公网安备 11010802033920号
EEWORLD
