<Szm.L-donciu.ctoi ^PiodacU, line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
TIC106A, TIC106B, TIC106C, TIC106D,
TIC106E,TIC106F,TIC106M
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
•
Silicon Controlled Rectifiers
•
•
50V to 600V
5 A DC
•
•
device schematic
30 A Surge Current
MAX IQT of 200 A
TO-Z2DAB PACKAGE
1
THE ANODE IS IN ELECTRICAL CONTACT WITH
THE MOUNTING TAB. THE DATE TERMINAL IS
CONNECTED TO A
"f"
REGION.
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
TIC106F
Repetitive peak off-state voltage, VQRM
(see
Note 1 )
Repetitive peak reverse voltage, VRRM
Continuous on-state current at (or below) 80°C case temperature (see Note 2)
Average on-state current (1 80° conduction angle) at (or below)
80°C case temperature (see Note 3)
Surge on-state current (see Note 4)
Peak positive gate current (pulse duration < 300 ps)
Peak gate power dissipation (pulse duration
<
300 ps)
Average gate power dissipation (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1,6mm (1/1 6 Inch) frorn case for 10 seconds
TIC106A
100V
100V
50V
60V
TIC108B
200V-
200V
BA
TIC108C
300V
300V
3.2A
30 A
0.2 A
1.3W
0.3 W
-40«Cto110°C
-40°Cto125°C
230°C
NOTES: 1. These values apply when the gate-cathode resistance RQK » I kQ.
2. These values apply for continuous d-c operation wtth resistive load. Above 80
C
C derate according to Figure 3.
3. This value may be applied continuously under single-phase 50-Hz half-slne-wave operation with reslatlve load. Above 80°C
derate according to Figure 3.
4. This value applies for one 50-Hz Mf-sine-wave when the device is operating at ior below) rated valutt of ptak reverse
voltage and on-3tate current. Surge may be repeated after the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
TIC106A, TIC106B, TIC106C, TIC106D,
TIC106E,TIC106F,TIC106M
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Repetitive peak off-state voltage, VQRM (see Note 1 }
Repetitive peak reverse voltage, VRRM
Continuous on-state current at (or below) 80°C case temperature (see Note 2)
Average on-state current (1 80° conduction angle} et (or below)
80°C casa temperature (see Note 3}
Surge on-state current (see Note 4}
Peak positive gate current (pulse duration < 300 us)
Peak gete power dissipation Ipulsa duration < 300 pg)
Average gate power dissipation (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1,6mm (1/1 6 inch) from case for 10 seconds
TIC106D
400V
400V
TIC106E
500V
600V
BA
3.2A
TIC106M
600V
600V
30 A
0.2 A
1,3W
0.3W
-40°Cto110°C
-40 'Cto-WC
230°C
NOTES: 1.
These values apply when the gate-cathode resistance RQK = 1 kfi.
2. These values apply for continuous d-c operation with resistive load. Above 6O*C derate according to Figure 3.
3. This value may be applied
continuously under
single-phase 50-Hz half-slne-wave operation with
resistive
load. Above 8O°C
derate
according to
Figure 3.
4. This
value applies
for one 50-M2 haif-slne-wave
when
the device
Is
operating at (or below) rated
values
of peak reverse
voltage and on-state current. Surge may be repeated after
the device has
returned to original
thermal
equilibrium,
5. This value applies for a maximum averaging time of 20 m$.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
IDHM
IRRM
IQY
R
<""
ititiv
<"'
Mk
TEST CONDITIONS
V
D
- Rated VDRM,
RGK = i ka,
T
c
« i io°c
MIN TYP MAX
4OO
1
UNIT
CA
mA
^A
Off-State Current
Re
P=*
lv
»
P
"
k
Reverse Current
Gate Trigger Current
V
R
= Rated VRRM,
VAA = 6V.
IG = 0,
R
L
=1000.
T
C
= 110°C
t
w
(
0
)i»20HS
60
200
1.2
VAA = 6V,
t
w(g)
>20
M
s,
VGT
Gate Trigger Voltage
R
L
= 1000.
T
C
=-40°C
RQ
K
- 1 ka
HQK » i ko,
0.4
0.2
VA
A
= e v,
t
w[fl
);» 20 us.
RL » 100Q,
0.6
1
V
VAA = ev,
•wlfl) *
2
°f
s
-
IH
VTM
dv/dt
Holding Current
Peak On-State Voltage
Critical Rate of Rise
of Off-State voltage
VAA = 6V,
V
AA
= 6V,
T
C
= -40«C
I
T M
.5A,
H
L
=IOOB,
TC = - 1 10°C
R
GK
= ika,
RQK = i ka,
initiatina IT = iomA
RGK = 1 ka,
Initiating IT ~ tOmA,
E
e
1.7-
mA
V
See Note 6
H
QK
= 1 kQ,
TC = 110°C
10
VD = Rated VD,
V/ta
NOTE
6: These parameters must be measured using pulse techniques, t
w
= 300 ps, duty cycle < 2 %. Voltage-sensing
separata from the current-carrying contacts, are located within 3,2 mm (1/8 inch) from the device body.
thermal characteristics
PARAMETER
R0JC
RSJA
MIN TYP MAX
3.6
62,6
UNIT
•C/W
TIC106A, TIC106B. TIC106C, TIC106D,
TIC106E,TIC106F,TIC106M
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
resistive-load switching characteristics at 25°C case temperature
PARAMETER
Gate-Controlled
Q
l
tq
TEST CONDITIONS
MIN TYP MAX
UNIT
VAA = 30 v.
V|
n
a50V,
R
L
= s a.
Sea Figure 1
RGKiott i = 6 kc.
'
I
RM
= 8A,
Turn-On Time
Circuit-Commutated
Tum-Off Time
1.76
IIS '
VAA =
30V.
See Figure 2
R
L
= 69,
7.7
PARAMETER MEASUREMENT INFORMATION
v
2
o.
Vi o.
VOLTAGE WAVEFORMS
WAVEFORMS
TEST CIRCUIT
FIGURE 1 . GATE-CONTROLLED TURN-ON TIME
A.
B.
C..
D.
E.
FIGURE 2.
TEST CIRCUIT
CIRCUIT-COMMUTATED TURN-OFF TIME
V;
n
Is meaaured with gate and cathode terminals open.
The input waveform of Figure 1 has the following characteristics: t
r
< 40 ns, t
w
> 20
ia.
Waveforms are monitored on an oscilloscope with the following characteristics: t
r
< 14ns, R|n* 10MB, C(
n
< 12pF.
RGKIeff ) includes the total resistance of the generator and the external resistor.
Pulse generators for V-) and V2 are synchronized to provide an anode current waveform wrrh the following characteristics:
t
m
= 60 to 300
its,
duty cycle = 1 %. The pulse widths of V j and Vj are > 10j«.
F. Resistor RI is adjusted for !RM
=
8 A.
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