, U
na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TIC226 SERIES
SILICON TRIACS
8 A RMS, 70 A Peak
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max I
GT
of 50 mA (Quadrants 1 - 3)
MT-I C
MT? r
l-ic
1
2
3
TO-220 PA CKAGE
(TOPV
EW)
o
VALUE
400
600
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
TIC226D
Repetitive peak off-state voltage (see Note 1 )
TIC226M
TIC226S
TIC226N
V
DRM
SYMBOL
UNIT
700
800
8
70
80
+1
2.2
0.9
-40 to
+110
V
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave (see Note 3)
Peak on-state surge current half-sine-wave (see Note 4)
Peak gate current
Peak gate power dissipation at (or below) 85°C case temperature (pulse width < 200 us)
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
'T(RMS)
'TSM
'TSM
A
A
A
A
W
W
°C
IGM
P
GM
PG(AV)
TC
Ts,
g
T
L
-40to+125
230
°c
°c
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 320 mATC.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
Repetitive peak
DRM
TEST CONDITIONS
V
D
= rated V
DRM
Vsuppiy = + 1 2 Vt
I
G
= 0
R
L
= 1 0 n
R
L
= 1 0 Q
R
L
=10n
R
L
=10Q
R
L
=10Q
R
L
=10Q
R
L
=100
RL = 1 0 "
MIN
TYP
MAX
±2
UNIT
mA
off-state current
Peak gate trigger
T
c
= 1 1 0°C
t
p(g)
> 20 us
t
p(g)
> 20 us
t
p(g)
>20u,s
t
p(g)
> 20 US
W*
20
^
5
W*
20
^
5
t
p(9
)>20ns
tp(g)
>
20 us
2
-12
-9
20
0.7
-0.8
-0.8
50
-50
-50
2
-2
-2
2
V
mA
'
G
™
current
Vsupply = +1 2 Vf
V
supply
= -12 Vf
V
supply
= -
1 2
Vt
Vsupply =
+
1 2 Vf
Peak gate trigger
VG
™
Vsupply =
+
1 2 Vt
Vsupply = -12 Vf
Vsupply = - 1 2 Vt
voltage
0.9
t All voltages are with respect to Main Terminal 1.
NJ Semi-Conctuctors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
TIC226 SERIES
SILICON TRIACS
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
V
TM
IH
I
L
dv/dt
dv/dt
M
1
'
Peak on-state voltage
Holding current
Latching current
Critical rate of rise of
off-state voltage
Critical rise of commu-
tation voltage
I
TM
= +12A
Vsupply
= +12V
t
V
su
ppi
y
= -12 Vf
TEST CONDITIONS
l
G
= 50mA
I
G
= 0
I
G
= 0
(see Note 6)
lnifl
T M
= 100mA
lnit'l
TM
= -100mA
WIN
TYP
±1.6
MAX
±2.1
UNIT
V
mA
mA
V/MS
5
-9
30
-30
50
-50
^:
+
\Hl
v
supply-
~'^
V
T
(seeNote7)
I
G
= 0
I
TRM
= ± 1 2 A
T
C
= 110°C ,
T
c
= 85°C
±5
±100
V
DRM
= Rated V
DRM
V
DRM
= Rated V
DRM
V/us
t All voltages are with respect to Main Terminal 1.
NOTES: 6. This parameter must be measured using pulse techniques, t
p
= < 1 ms, duty cycle < 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
7. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
R
G
= 100 fi tp
(g)
= 20 us, t
r
= < 15 ns, f = 1 kHz.
thermal characteristics
PARAMETER
R
e
jc
R
9JA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1.8
62.5
UNIT
°c/w
°c/w
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
CASE TEMPERATURE
10
V.
12 V
p
—m
K
L
. -±
GATE TRIGGER VOLTAGE
vs
CASE TEMPERATURE
V
* supply 'BTM
I
1
P
a)--
11
MS
+
+
+
t
Dlal
= 20 us _|
? 100
0>
+ -
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>°
0-1
-60
n-1
-60
-40
-20
0
20
40
60
80
100
120
-40
-20
20
40
60
80
100
120
T
c
- Case Temperature - °C
T
c
• Case Temperature - °C
Figure 2.
Figure 1.
NXP MCU
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