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UF5402G

Description
3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size584KB,3 Pages
ManufacturerYenyo Technology Co., Ltd.
Websitehttp://www.yenyo.com.tw/
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UF5402G Overview

3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD

YENYO
Glass Passivated Ultra Fast Recovery Rectifier
Voltage Range 50 to 1000 V
Current 3.0 Ampere
DO-201AD
.052(1.3)
.048(1.2)
1.0(25.4)
MIN.
DIA.
UF5400G THRU UF5408G
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakge current
High surge current capability
Mechanical Data
Case: Molded plastic DO-201AD
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208 guranteed
Polarity:Color band denotes cathode
Mounting position: Any
Weight: 1.1 gram
.375(9.5)
.285(7.2)
.210(5.3)
1.0(25.4)
MIN.
.190(4.8)
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMTER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
L
=55
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 3.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Maximum Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
UF
UF
UF
UF
UF
UF
UF
UF
SYMBOL 5400G 5401G 5402G 5403G 5404G 5406G 5407G 5408G UNIT
V
RRM
V
RMS
V
DC
IF
(AV)
50
35
50
100
70
100
200
140
200
300
210
300
3.0
400
280
400
600
420
600
800
560
800
1000
700
1000
V
V
V
A
I
FSM
150
A
V
F
I
R
Trr
C
J
R
JA
T
J
, T
STG
1.0
5.0
100
50
45
20
-55 to +150
1.7
V
uA
uA
nS
pF
o
75
36
CW
o
C
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Thermal Resistance junction to lead.
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
1/2
R1, MAY-12

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UF5402G UF5400G UF5401G UF5403G UF5406G UF5407G UF5408G
Description 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD
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