Green
ZVNL110G
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
100V
R
DS(ON)
max
3.0Ω @ V
GS
= 10V
4.5Ω @ V
GS
= 5.0V
I
D
max
T
A
= 25°C
0.6A
0.5A
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
NEW PRODUCT
NEW PRODUCT
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram Below
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Applications
DC-DC Converters
Power Management Functions
SOT223
D
G
S
Top View
Pin Out - Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
ZVNL110GTA
Notes:
Compliance
Standard
Case
SOT223
Packaging
1,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
ZVNL
110
ZVNL110 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
YWW
ZVNL110G
Document number: DS33386 Rev. 4 - 2
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February 2015
© Diodes Incorporated
ZVNL110G
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
Value
100
±20
0.6
0.5
6
1.5
Units
V
V
A
A
A
NEW PRODUCT
NEW PRODUCT
Pulsed Drain Current (10μs Pulse, Duty Cycle
≦
1%)
Maximum Body Diode Continuous Current (Note 6)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
Symbol
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
1.1
2.0
113
61
6.6
-55 to +150
°C
Units
W
°C/W
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
On-State Drain Current
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
I
D(ON)
V
GS(TH)
R
DS(ON)
g
fs
C
iss
C
oss
C
rss
t
D(ON)
t
R
t
D(OFF)
t
F
Min
100
750
0.75
225
Typ
47
23
6
2
3
5
2
Max
10
100
±100
1.5
3.0
4.5
75
25
8
7
12
15
13
ns
V
DD
= 25V, V
GS
= 10V,
R
G
= 6.0Ω, I
D
= 1.0A
pF
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz
Unit
V
µA
nA
mA
V
Ω
mS
Test Condition
V
GS
= 0V, I
D
= 1mA
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= +125°C
V
GS
= ±20V, V
DS
= 0V
V
DS
= 25V, V
GS
= 5V
V
DS
= V
GS
, I
D
= 1mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 5.0V, I
D
= 250mA
V
DS
= 25V, I
D
= 500mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
ZVNL110G
Document number: DS33386 Rev. 4 - 2
2 of 6
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February 2015
© Diodes Incorporated
ZVNL110G
1.0
V
GS
= 10V
1
V
GS
= 8.0V
V
GS
= 5.0V
V
DS
= 5V
T
A
= -55°C
T
A
= 25°C
0.8
0.8
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
T
A
= 85°C
NEW PRODUCT
NEW PRODUCT
0.6
V
GS
= 4.0V
0.6
T
A
= 125°C
T
A
= 150°C
0.4
0.4
0.2
V
GS
= 3.0V
V
GS
= 2.5V
V
GS
= 2.0V
0.2
0.0
0
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
1
5
0
0
2
4
6
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
8
R
DS(ON )
, DRAIN-SOURCE ON-RESISTANCE (
)
4
V
GS
= 5V
R
D S(ON )
, DRAIN-SOURCE ON-RESISTANCE (
)
5
6
5
3
V
GS
= 10V
4
I
D
= 500mA
2
3
I
D
= 250mA
1
2
0
0
0.4
0.8
1.2
1.6
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
V
GS
= 10V
2
1
0
8
12
16
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
2
4
20
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
6
R
D S(ON )
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
5
1.8
1.6
V
GS
= 10V
4
T
A
= 150°C
T
A
= 125°C
1.4
1.2
3
T
A
= 85°C
T
A
= 25°C
I
D
= 500mA
V
GS
= 5V
I
D
= 250mA
2
T
A
= -55°C
1
0.8
0.6
-50
1
0
0
0.4
0.8
1.2
1.6
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
2
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
ZVNL110G
Document number: DS33386 Rev. 4 - 2
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February 2015
© Diodes Incorporated
ZVNL110G
R
D S(on)
, DRAIN-SOURCE ON-RESISTANCE (
)
5
4.5
4
3.5
3
2.5
2
1.5
1
-50
-25
0
25
50
75
100
125
150
V
GS
= 10V
I
D
= 500mA
V
GS
= 5V
I
D
= 250mA
1.6
V
GS(TH )
, GATE THRESHOLD VOLTAGE (V)
1.3
I
D
= 1mA
NEW PRODUCT
NEW PRODUCT
I
D
= 250µA
1
0.7
0.4
-50
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Temperature
f = 1MHz
2
1.8
T
A
= 150°C
1000
I
S
, SOURCE CURRENT (A)
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
T
A
= 25°C
T
A
= 85°C
T
A
= 125°C
C
T
, JUNCTION CAPACITANCE (pF)
100
C
iss
C
oss
10
C
rss
T
A
= -55°C
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
R
DS(on)
Limited
P
W
= 100µs
1.5
1
0
5
10
15
20
25
30
35
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
40
10
I
D
, DRAIN CURRENT (A)
1
P
W
= 1ms
DC
0.1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
0.01
T
J(m ax)
= 150°C
T
A
= 25°C
V
GS
= 10V
Single Pulse
DUT on 1 * MRP Board
P
W
= 10ms
0.001
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
1000
ZVNL110G
Document number: DS33386 Rev. 4 - 2
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February 2015
© Diodes Incorporated
ZVNL110G
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
r(t), TRANSIENT THERMAL RESISTANCE
0.1
D = 0.1
D = 0.05
NEW PRODUCT
NEW PRODUCT
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
R
thja
(t) = r(t) * R
thja
R
thja
= 111°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
10
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
0.1
1
100
1000
0.001
0.0001
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
D
b1
Q
C
E
Gauge
Plane
E1
0.25
Seating
Plane
L
e1
e
b
-1
0°
0°
SOT223
Dim Min Max Typ
A
1.55 1.65 1.60
A1
0.010 0.15 0.05
b
0.60 0.80 0.70
b1
2.90 3.10 3.00
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
-
-
4.60
e1
-
-
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
A
A1
7°
7°
ZVNL110G
Document number: DS33386 Rev. 4 - 2
5 of 6
www.diodes.com
February 2015
© Diodes Incorporated
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