P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
* 200 Volt V
DS
* R
DS(on)
=25Ω
ZVP2120A
D
G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
E-Line
TO92 Compatible
VALUE
-200
-120
-1.2
±
20
UNIT
V
mA
A
V
mW
°C
700
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source
On-State Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
50
100
25
7
7
15
12
15
-300
25
-200
-1.5
-3.5
20
-10
-100
MAX. UNIT CONDITIONS.
V
V
nA
µ
A
µ
A
I
D
=-1mA, V
GS
=0V
ID=-1mA, V
DS
= V
GS
V
GS
=
±
20V, V
DS
=0V
V
DS
=-200 V, V
GS
=0
V
DS
=-160 V, V
GS
=0V,
T=125°C
(2)
V
DS
=-25 V, V
GS
=-10V
V
GS
=-10V,I
D
=-150mA
V
DS
=-25V,I
D
=-150mA
mA
Ω
mS
pF
pF
pF
ns
ns
ns
ns
V
DS
=-25V, V
GS
=0V, f=1MHz
V
DD
≈
-25V, I
D
=-150mA
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
≤
2%
(2) Sample test.
3-425
(
3
ZVP2120A
TYPICAL CHARACTERISTICS
I
D(On)
-On-State Drain Current (Amps)
I
D(On)
-On-State Drain Current (Amps)
V
GS=
-10V
-8V
-7V
-6V
-0.4
-0.4
V
GS
=
-10V
-8V
-7V
-6V
-0.6
-0.3
-5V
-0.2
-4.5V
-0.1
-4V
-3.5V
0
0
-2
-4
-6
-8
-10
-5V
-0.2
-4.5V
-4V
0
0
-20
-40
-60
-80
-3.5V
-100
V
DS
- Drain Source
Voltage (Volts)
V
DS
- Drain Source
Voltage (Volts)
Output Characteristics
Saturation Characteristics
I
D(On)-
On-State Drain Current (Amps)
-20
V
DS-
Drain Source
Voltage (Volts)
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0
-2
-4
-6
-8
I
D=
-
300mA
-200mA
-100mA
-50mA
-10
V
DS=
-25V
-0.6
-0.4
-10V
-0.2
0
0
-2
-4
-6
-8
-10
V
GS-
Gate Source Voltage
(Volts)
V
GS-
Gate Source
Voltage (Volts)
Voltage Saturation Characteristics
R
DS(ON)
-Drain Source Resistance
(Ω)
Transfer Characteristics
100
2.6
Normalised R
DS(on)
and V
GS(th)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-40 -20
0
D
eR
nc
ta
sis
)
on
S(
50
I
D=
-300mA
-200mA
-I00mA
-50mA
V
GS=
-10V
I
D=-
0.1A
-
ain
Dr
Re
ce
ur
So
V
GS=
V
DS
I
D=
-1mA
Gate Thresh
old Voltage
V
GS(th)
10
-1
-10
-20
20 40 60 80 100 120 140 160 180
V
GS
-Gate Source Voltage
(Volts)
T-Temperature
(°C)
On-resistance vs gate-source voltage
Normalised R
DS(on)
and V
GS(th)
vs Temperature
3-426
ZVP2120A
TYPICAL CHARACTERISTICS
200
200
V
DS=
-25V
g
fs
-Transconductance (mS)
g
fs
-Transconductance (mS)
180
160
140
120
100
80
60
40
20
0
0
-0.2
-0.4
-0.6
-0.8
180
160
140
120
100
80
60
40
20
0
0
-2
-4
-6
-8
-10
V
DS=
-25V
I
D
- Drain Current (Amps)
V
GS
-Gate Source Voltage (Volts)
Transconductance v drain current
Transconductance v gate-source voltage
V
GS
-Gate Source Voltage (Volts)
0
I
D=-
0.4A
-2
-4
-6
-8
-10
-12
-14
-16
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
V
DS
=
-50V -100V -180V
100
C-Capacitance (pF)
80
C
iss
60
40
20
C
oss
C
rss
0
-10
-20
-30
-40
-50
V
DS
-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3-427
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