Green
ZVP2120G
SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET
Product Summary
ADVANCE INFORMATION
V
(BR)DSS
-200V
25
R
DS(on)
@ V
GS
= -10V
I
D
T
A
= +25°
C
-200mA
Features and Benefits
•
•
•
•
•
Low On-Resistance
Fast Switching Speed
Complementary Type – ZVN2120G
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This MOSFET is designed to minimize the on-state resistance and
yet maintain superior switching performance, making it ideal for high
efficiency power management applications.
Mechanical Data
•
•
•
•
•
•
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram Below
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Applications
•
•
Backlighting
AC-DC Converters
SOT223
D
G
S
Top View
Pin Out - Top
View
Equivalent Circuit
Ordering Information
(Note 4)
Product
ZVP2120GTA
Note:
Case
SOT223
Quantity per reel
1,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
SOT223
ZVP
2120
ZVP 2120 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
YWW
ZVP2120G
Document number: DS33399 Rev. 4 - 2
1 of 6
www.diodes.com
March 2015
© Diodes Incorporated
ZVP2120G
Maximum Ratings
(@T
A
= +25°C unless otherwise specified.)
Characteristic
ADVANCE INFORMATION
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Symbol
V
DS
I
D
I
DM
Value
-200
-200
-1.2
Units
V
mA
A
Thermal Characteristics
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Power Dissipation
Operating and Storage Temperature Range
Symbol
P
tot
T
J
, T
STG
Value
2
-55 to +150
Units
W
°
C
Electrical Characteristics
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Static Characteristics
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 5)
Static Drain-Source On-State Resistance (Note 5)
Forward Transconductance (Notes 5 & 6)
Dynamic Characteristics (Note 6)
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 7)
Rise Time (Note 7)
Turn-Off Delay Time (Note 7)
Fall Time (Note 7)
Notes:
Symbol
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
f
f
Min
-200
-1.5
-
-
-300
-
50
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-3.5
-20
-10
-100
-
25
-
100
25
7
7
15
12
15
Unit
V
V
nA
µA
µA
mA
mS
Test Condition
I
D
= -1mA, V
GS
= 0V
I
D
= -1mA, V
DS
= V
GS
V
GS
= ±20V, V
DS
= 0V
V
DS
= -200V, V
GS
= 0V
V
DS
= -160V, V
GS
= 0V,
T = +125° (Note 6)
C
V
DS
= -25V, V
GS
= -10V
V
GS
= -10V, I
D
= -150mA
V
DS
= -25V, I
D
= -150mA
pF
V
DS
= -25V, V
GS
= 0V, f=1MHz
ns
V
DD
= -25V, I
D
= -150mA
5. Measured under pulsed conditions. Width=300
µs
. Duty cycle 2%.
6. Sample Test.
7. Switching times measured with 50 source impedance and <5ns rise time on a pulse generator.
ZVP2120G
Document number: DS33399 Rev. 4 - 2
≦
2 of 6
www.diodes.com
March 2015
© Diodes Incorporated
ZVP2120G
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
ADVANCE INFORMATION
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
ZVP2120G
Document number: DS33399 Rev. 4 - 2
5 of 6
www.diodes.com
1E
0
1-°
°0
E
C
L
Q
52.0
2Y
enalP
gnitaeS
enalP
eguaG
1C
7
°
°7
b
C
1X
1b
D
e
SOT223
Dim Min Max Typ
A
1.55 1.65 1.60
A1
0.010 0.15 0.05
b
0.60 0.80 0.70
b1
2.90 3.10 3.00
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
-
-
4.60
e1
-
-
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
X
1e
1Y
1A
Y
A
Dimensions Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
C2
8.00
March 2015
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
