SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 OCTOBER 1995
FEATURES
* 100 Volt V
DS
* R
DS(on)
=20Ω
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
7
ZVP3310F
D
S
ZVN3310F
MR
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
-300
20
50
50
15
5
8
8
8
8
-100
-1.5
-3.5
-20
-1
-50
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
-100
75
-1.2
±
20
UNIT
V
mA
A
V
mW
°C
330
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
MAX. UNIT CONDITIONS.
V
V
nA
µ
A
µ
A
I
D
=-1mA, V
GS
=0V
I
D
=-1mA, V
DS
= V
GS
V
GS
=
±
20V, V
DS
=0V
V
DS
=-100V, V
GS
=0
V
DS
=-80V, V
GS
=0V, T=125°C
(2)
V
DS
=-25 V, V
GS
=-10V
V
GS
=-10V, I
D
=-150mA
V
DS
=-25V, I
D
=-150mA
mA
Ω
Static Drain-Source On-State R
DS(on)
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
mS
pF
pF
pF
ns
ns
ns
ns
V
DS
=-25V, V
GS
=0V, f=1MHz
V
DD
≈
-25V, I
D
=-150mA
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
≤
2% (2) Sample test.
(3) Switching times measured with 50
Ω
source impedance and <5ns rise time on a pulse generator
3 - 436
ZVP3310F
TYPICAL CHARACTERISTICS
V
GS=
-20V
-16V
-14V
-12V
-10V
-9V
-8V
-10
-0.6
I - Drain Current (Amps)
-8
-0.4
-6
-0.2
Drain Source
-7V
-6V
-5V
-4
I
D=
-0.3A
-0.15A
-0.075A
-2
0
-2
-4
-6
-8
-4V
-10
0
0
-2
-4
-6
-8
-10
V
V
DS
- Drain Source
Voltage (Volts)
V
GS-
Gate Source Voltage
(Volts)
Saturation Characteristics
Voltage Saturation Characteristics
100
50
g -Transconductance (mS)
90
80
70
60
50
40
30
20
10
0
0
-0.1
-0.2
-0.3
-0.4
C-Capacitance (pF)
V
DS=
-10V
40
V
GS=
0V
f
= 1MHz
30
20
C
iss
C
oss
C
rss
0
-20
-40
-60
-80
10
BI
0
-0.5
-0.6
-0.7
-0.8
I
D
- Drain Current (Amps
)
V
DS
-Drain Source Voltage (Volts)
Transconductance v drain current
Capacitance v drain-source voltage
-16
2.6
2.4
2.2
-Gate Source Voltage (Volts)
-14
and V
-12
-10
-8
V
GS=
-10V
I
D=
-150mA
2.0
1.8
1.6
-4
-2
0
0
-25V
-50V -100V
I
D= -
0.2A
0.4
0.6
0.8
1.0
1.2
Normalised R
-6
V
DS
=
1.4
1.2
1.0
0.8
0.6
-40 -20
0
20
40
60
80 100 120 140 160 180
V
GS=
V
DS
I
D=
-1mA
V
5
/
0.2
Q-Charge (nC)
T
j
-Junction Temperature (°C)
Gate charge v gate-source voltage
Normalised R
DS(on)
and V
GS(th)
v Temperature
3 - 437
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