P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 SEPTEMBER 94
FEATURES
* 240 Volt V
DS
* R
DS(on)
=9Ω
* Low threshold
APPLICATIONS
* Electronic Hook Switch
ZVP4424C
G
D
S
REFER TO ZVP4424A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
-240
-200
-1
±
40
E-Line
TO92 Compatible
VALUE
UNIT
V
mA
A
V
mW
°C
750
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current
Static Drain-Source
On-State Resistance
Forward
Transconductance (1) (2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
125
100
18
5
8
8
26
20
200
25
15
15
15
40
30
-0.75
-1.0
7.1
8.8
9
11
-240
-0.7
-1.4
-2.0
100
-10
-100
TYP
MAX. UNIT
V
V
nA
µ
A
µ
A
CONDITIONS.
I
D
=-1mA, V
GS
=0V
ID=-1mA, V
DS
= V
GS
V
GS
=
±
40V, V
DS
=0V
V
DS
=-240 V, V
GS
=0
V
DS
=-190V, V
GS
=0V, T=125°C
V
DS
=-10 V, V
GS
=-10V
V
GS
=-10V,I
D
=-200mA
V
GS
=-3.5V,I
D
=-100mA
V
DS
=-10V,I
D
=-0.2A
A
Ω
Ω
mS
pF
pF
pF
ns
ns
ns
ns
V
DS
=-25V, V
GS
=0V, f=1MHz
V
DD
≈−
50V, I
D
=-0.25A,
V
GEN
=-10V
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
≤
2% (2) Sample test.
(3) Switching times measured with 50
Ω
source impedance and <5ns rise time on a pulse generator
3-439
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