ZX5T851A
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE
SUMMARY
BV
CEO
= 60V : R
SAT
= 34m ; I
C
= 4.5A
DESCRIPTION
Packaged in the E-line outline this new 5th generation low saturation 60V NPN
transistor offers extremely low on state losses making it ideal for use in DC-DC
circuits and various driving and power management functions.
FEATURES
•
Extemely low equivalent on-resistance;
R
SAT
= 34m at 5A
•
4.5 amps continuous current
•
Up to 15 amps peak current
•
Very low saturation voltages
E-LINE
APPLICATIONS
•
Emergency lighting circuits
•
Motor driving (including DC fans)
•
Solenoid, relay and actuator drivers
•
DC modules
•
Backlight inverters
ORDERING INFORMATION
DEVICE
ZX5T851ASTOA
ZX5T851ASTZ
QUANTITY
2000 units / reel
2000 units / carton
DEVICE MARKING
•
X5T851
PINOUT
ISSUE 1 - NOVEMBER 2003
1
SEMICONDUCTORS
ZX5T851A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
(a)
Peak pulse current
Practical power dissipation
(a)
Linear derating factor
Power dissipation at T
A
=25°C
Linear derating factor
Operating and storage temperature range
T
j
, T
stg
(b)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
C
I
CM
P
D
P
D
LIMIT
150
60
7
4.5
15
1.0
8
0.71
5.7
-55 to +150
UNIT
V
V
V
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to ambient
(a)
Junction to ambient
(b)
SYMBOL
R
JA
R
JA
VALUE
125
175
UNIT
°C/W
°C/W
NOTES
(a) For a device through hole mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
Collector lead length to solder point 4mm.
(b For a device mounted in a socket in still air conditions. Collector lead length 10mm.
ISSUE 1 - NOVEMBER 2003
SEMICONDUCTORS
2
ZX5T851A
CHARACTERISTICS
ISSUE 1 - NOVEMBER 2003
3
SEMICONDUCTORS
ZX5T851A
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
SYMBOL
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
I
CER
R 1k
I
EBO
V
CE(SAT)
18
40
45
95
170
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
V
BE(SAT)
V
BE(ON)
h
FE
100
100
55
20
Transition frequency
Output capacitance
Switching times
f
T
C
OBO
t
ON
t
OFF
* Measured under pulsed conditions. Pulse width
950
840
200
200
105
40
130
31
42
760
300 s; duty cycle
2%.
300
MIN.
150
150
60
7
TYP.
190
190
80
8.1
20
0.5
20
0.5
10
30
55
65
130
210
1050
950
MAX. UNIT CONDITIONS
V
V
V
V
nA
A
nA
A
nA
mV
mV
mV
mV
mV
mV
mV
I
C
=100 A
I
C
=1 A, RB 1k
I
C
=10mA*
I
E
=100 A
V
CB
=120V
V
CB
=120V, T
amb
=100 C
V
CB
=120V
V
CB
=120V, T
amb
=100 C
V
EB
=6V
I
C
=100mA, I
B
=5mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, I
B
=50mA*
I
C
=2A, I
B
=50mA*
I
C
=5A, I
B
=200mA*
I
C
=4A, I
B
=200mA*
I
C
=4A, V
CE
=1V*
I
C
=10mA, V
CE
=1V*
I
C
=2A, V
CE
=1V*
I
C
=5A, V
CE
=1V*
I
C
=10A, V
CE
=1V*
MHz I
C
=100mA, V
CE
=10V
f=50MHz
pF
ns
ns
V
CB
=10V, f=1MHz*
I
C
=1A, V
CC
=10V,
I
B1
=I
B2
=100mA
ISSUE 1 - NOVEMBER 2003
SEMICONDUCTORS
4
ZX5T851A
TYPICAL CHARACTERISTICS
ISSUE 1 - NOVEMBER 2003
5
SEMICONDUCTORS
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